Theoretical Analysis of Amorphous Silicon Alloy Based Triple Junction Solar Cells
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概要
- 論文の詳細を見る
A theoretical analysis using analysis of microelectronic and photonic structures (AMPS-1D) has been performed to investigate for the first time the most preferred bandgap combination of amorphous silicon alloy based triple junction solar cells. We employed our new tunnel-recombination junction (TRJ) model to simulate the characteristics of a triple cell as a complete single device. We calculated two cases, hydrogenated microcrystalline silicon (μc-Si:H) as the bottom cell and as the middle cell. For both cases we found that a 2.0 eV top cell band gap is required to achieve efficiency of over 20%.
- Japan Society of Applied Physicsの論文
- 2007-12-25
著者
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Yunaz Ihsanul
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Yunaz Ihsanul
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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