Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells
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概要
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The effects of annealing and atomic hydrogen treatment (AHT) on the interface between hydrogenated aluminum oxide (a-Al1-xOx:H) and crystalline silicon (c-Si) were investigated. The annealing increased the negative interface fixed charge density ($Q_{\text{f}}$) from $-4.0\times 10^{11}$ to $-3.0\times 10^{12}$ cm-2, whereas AHT reduced $Q_{\text{f}}$ from $-3.0\times 10^{12}$ to $8.3\times 10^{11}$ cm-2. Chemical composition analyses revealed the existence of a hydrogenated silicon oxide (a-Si1-xOx:H) interfacial layer. It was also found that annealing and AHT strongly affected the chemical compositions near the interfacial layer. The change in $Q_{\text{f}}$ is probably caused by the reaction at the interface between the a-Al1-xOx:H and a-Si1-xOx:H.
- 2011-01-25
著者
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Irikawa Junpei
Department Of Physical Electronics Tokyo Institute Of Technology
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Watahiki Tatsuro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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MIYAJIMA Shinsuke
Institute of Physical Electronics, University of Stuttgart
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Konagai Makoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan
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Kida Shuhei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan
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Watahiki Tatsuro
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan
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Miyajima Shinsuke
Institute of Physical Electronics, University of Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
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Irikawa Junpei
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, Tokyo 152-8552, Japan
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