GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Takumi
Department of Cardiology, Nagoya University Graduate School of Medicine
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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TAKAHASHI Kiyoshi
Department of Medicine, National Minami-Okayama Hospital
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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NOZAKI Shinji
Department of Physical Electronics, Tokyo Institute of Technology
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MIYAKE Ryuji
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Miyake Ryuji
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Nozaki Shinji
Department Of Communications And Systems The University Of Electro-communications
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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TAKAHASHI Kiyoshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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YAMADA Takumi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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