Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-04-20
著者
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Takumi
Department of Cardiology, Nagoya University Graduate School of Medicine
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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TAKAHASHI Kiyoshi
Department of Medicine, National Minami-Okayama Hospital
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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Yamada T
Tokai Univ. Hiratsuka Jpn
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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NOZAKI Shinji
Department of Physical Electronics, Tokyo Institute of Technology
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MIYAKE Ryuji
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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AKATSUKA Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
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Takahashi Kouchiro
National Institute For Research In Inorganic Materials
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Nozaki S
Univ. Electro‐communications Tokyo
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Miyake Ryuji
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Nozaki Shinji
Department Of Communications And Systems The University Of Electro-communications
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Akatsuka Takeshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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