Heavily Carbon-Doped P-Type GaAs Grown on GaAs Substrates with Various Orientations by Metalorganic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-02-15
著者
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Konagai Makoto
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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CUO Li-Qi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Cuo Li-qi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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