Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-15
著者
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山田 晃
東京農工大学生物システム応用科学府
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YAMADA Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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KONAGAI Makoto
Tokyo Institute of Technology
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Yamada Akira
Frontier Research Program The Institute Of Physical And Chemical Research (riken)
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山田 晃
東京農工大学生物システム応用科学研究科
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Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
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MIYAJIMA Shinsuke
Department of Physical Electronics, Tokyo Institute of Technology
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