Characterization and Comparison of Strained Si_<1-y>C_y Metal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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山田 明
東京工業大学大学院理工学研究科電子物理工学専攻
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ISHIHARA Hanae
Department of Physical Electronics, Tokyo Institute of Technology
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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ABE Katsuya
Department of Physical Electronics, Tokyo Institute of Technology
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YAMADA Akira
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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WATAHIKI Tatsuro
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Akira
Frontier Research Program The Institute Of Physical And Chemical Research (riken)
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Konagai M
Tokyo Inst. Technol. Tokyo Jpn
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Watahiki Tatsuro
Department Of Physical Electronics Tokyo Institute Of Technology
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Ishihara Hanae
Department Of Physical Electronics Tokyo Institute Of Technology
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