Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-03-15
著者
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Takahashi K
National Inst. Res. In Inorganic Materials Ibaraki Jpn
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Yamada Takumi
Department of Cardiology, Nagoya University Graduate School of Medicine
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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TAKAHASHI Kiyoshi
Department of Medicine, National Minami-Okayama Hospital
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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Yamada T
Tokai Univ. Hiratsuka Jpn
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Tecnology
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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FUJIMOTO Isao
Science and Technical Research Laboratories of NHK
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NISHINE Shiro
Sumitomo Electric Industries, Ltd.
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Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
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Takahashi Kuniharu
Graduate School Of Science And Technology Niigata University
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Takahashi Kouchiro
National Institute For Research In Inorganic Materials
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Nishine S
Sumitomo Electric Industries Ltd.
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Nishine Shiro
Sumitomo Electric Industries Ltd.
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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TAKAHASHI Kenji
Semiconductor Research Laboratory, Pioneer Electronic Corporation
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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