P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-09-15
著者
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Takumi
Department of Cardiology, Nagoya University Graduate School of Medicine
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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TAKAHASHI Kiyoshi
Department of Medicine, National Minami-Okayama Hospital
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SHIRAKASHI Jun-ichi
Department of Electrical and Electronic System Engineering, Tokyo University of Agriculture and Tech
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Yamada T
Tokai Univ. Hiratsuka Jpn
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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TOKUMITSU Eisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NOZAKI Shinji
Department of Physical Electronics, Tokyo Institute of Technology
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QI Ming
Department of Physical Electronics, Tokyo Institute of Technology
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Qi Ming
Department Of Physical Electronics Tokyo Institute Of Technology
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Nozaki Shinji
Department Of Communications And Systems The University Of Electro-communications
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Shirakashi Jun-ichi
Department Of Electrical And Electronic System Engineering Tokyo University Of Agriculture And Techn
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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Shirakashi Jun-ichi
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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YAMADA Takumi
Department of Physical Electronics, Tokyo Institute of Technology
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SHIRAKASHI Jun-ichi
Department of Physical Electronics, Tokyo Institute of Technology
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