GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-12-30

著者

• KONAGAI Makoto

  Department of Physical Electronics, Tokyo Institute of Technology

• Yamada Takumi

  Department of Cardiology, Nagoya University Graduate School of Medicine

• Yamada T

  Tokyo Inst. Of Technol. Tokyo Jpn

• SAITO Koki

  Department of Electronics and Information Science, Teikyo University of Science and Technology

• Yamada T

  Tokyo Inst. Technol. Tokyo Jpn

• Sato K

  Depertment Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Saito K

  Department Of Materials Technology Chiba University

• Yamada T

  Daido Inst. Technol. Nagoya Jpn

• Yamada T

  Sophia Univ. Tokyo Jpn

• TAKAHASHI Kiyoshi

  Department of Medicine, National Minami-Okayama Hospital

• Takahashi Kiyoshi

  Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry

• Matsumoto Kazuhiko

  Electrotechnical Laboratory (etl)

• Sato Kuninori

  Institute For Fusion Science

• Yamada T

  Tokai Univ. Hiratsuka Jpn

• Konagai Makoto

  Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology

• TOKUMITSU Eisuke

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

• NOZAKI Shinji

  Department of Physical Electronics, Tokyo Institute of Technology

• SHIRAKASHI Junichi

  Department of Physical Electronics, Tokyo Institute of Technology

• QI Ming

  Department of Physical Electronics, Tokyo Institute of Technology

• Sato K

  Department Of Electronics And Information Science Teikyo University Of Science And Technology

• Takahashi K

  Tokyo Inst. Technol. Yokohama Jpn

• Matsumoto Kazuhiko

  Electrotechnical Laboratory (elt)

• Takahashi Kouchiro

  National Institute For Research In Inorganic Materials

• Saito K

  Nagaoka National Coll. Technol. Nagaoka Jpn

• Qi Ming

  Department Of Physical Electronics Tokyo Institute Of Technology

• Nozaki S

  Univ. Electro‐communications Tokyo

• Nozaki Shinji

  Department Of Communications And Systems The University Of Electro-communications

• Tokumitsu E

  Tokyo Inst. Technol. Yokohama Jpn

• Tokumitsu E

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Shirakashi Junichi

  Electrotechnical Laboratory

• Saito K

  Application Laboratory

• Saito K

  Av-it Development Group. Sony Corporation

• Konagai Makoto

  Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology

• Shirakashi Jun-ichi

  Electrotechnical Laboratory

• Matsumoto Kazuhiko

  Electrotechnical Laboratory

• Matsumoto Kazuhiko

  Electrotechnical Labs

• Takahashi Kiyoshi

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Takahashi Kiyoshi

  Department Of Agronomy Faculty Of Agriculture Tohoku University

関連論文

• Growth of Strain-Relaxed Si_C_y Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy
• Substitutional C Incorporation into Si_C_y Alloys Using Novel Carbon Source, 1, 3-Disilabutane
• Characterization and Device Application of Tensile-Strained Si_C_y Layers Grown by Gas-Source Molecular Beam Epitaxy
• Characterization and Comparison of Strained Si_C_y Metal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method
• Novel In(OH)_3:Zn^ Buffer Layer for Cu(InGa)Se_2 Based Solar Cells
• Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells
• Phosphorous Doping of Strain-Induced Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
• Preferred Orientation Control of Cu(In_Ga_x)Se_2 (x≈0.28) Thin Films and Its Influence on Solar Cell Characteristics
• P-Doping into Strain-Induced Si_C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition
• Epitaxial Growth of γ-In_2Se_3 Films by Molecular Beam Epitaxy
• Epitaxial Growth of Si_C_y Film by Low Temperature Chemical vapor Deposition
• Formation of pn Homojunction in Cu(InGa)Se_2 Thin Film Solar Cells by Zn Doping
• Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
• Improvement of the Electrochemical Profiling Technique of Carrier Concentration in Cu(InGa)Se_2 Thin Film Solar Cells
• High-Efficiency Amorphous Silicon Solar Cells with ZnO as Front Contact
• Improvement of Stabilized Efficiency of Amorphous Silicon Solar Cell by SiH_2Cl_2 Addition
• Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique
• Improvement in Performances of ZnO : B/i-ZnO/Cu(InGa)Se_2 Solar Cells by Surface Treatments for Cu(InGa)Se_2
• Electrical and Structural Characterizations of Cu(InGa)Se_2 Thin Films Using Electrochemical Capacitance-Voltage Method and Focused-Ion Beam Process
• Cu(InGa)Se_2 Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Layer Deposition
• Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 μm
• Molecular Beam Epitaxy and Characterization of Layered In_2Se_3 Films Grown on Slightly Misoriented (001)GaAs Substrates
• Heteroepitaxy and Multiquantum Well Structure of Layered Compound GaSe/GaS_xSe_ on (001) GaAs Substrate
• Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence
• Characterizaiton of ZnIn_xSe_y Thin Films as a Buffer Layer for High Efficiency Cu(InGa)Se_2 Thin-Film Solar Cells
• Numerical Analysis to Improve the Stabilized-Efficiency of Amorphous Silicon Solar Cells with New Device Structure
• Efficiency Improvement of Cu(InGa)Se_2 Thin Film Solar Cells with a High Ga Composition Using Rapid Thermal Annealing
• Characterization of Tensile Strained Si_1_yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
• Improvement in Aspect Ratio of P-GaAs Oxide Fabricated by Atomic Force Microscope (AFM)-Based Nanolithography Using Pulsed Voltage
• Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation
• Photoluminescence Studies and Solar-Cell Application of CuInSe_2 Thin Films Prepared using Selenization Techniques
• Photoluminescence Study of CuInSe_2 Thin Films Prepared by the Selenization Technique
• Study of CuInSe_2 Formation Kinetics in the Selenization Process by Raman Spectroscopy
• Developmemt of High-Efficiency CuIn_xGa_Se_2 Thin-Film Solar Cells by Selenization with Elemental Se Vapor in Vacuum
• Heteroepitaxy of Layered Compound InSe and InSe/GaSe onto GaAs Substrates
• InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5×10^cm^)
• Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
• Characterization of Carbon-Doped GaAs Grown by Molecular Beam Epitaxy Using Neopentane as Carbon Source
• Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
• Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
• GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
• P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
• GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE
• Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT's
• Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
• Preparation of GaAs and Ga_Al_xAs Multi-Layer Structures by Metalorganic Molecular Beam Epitaxy
• Metalorganic Molecular-Beam Epitaxial Growthand Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources
• Highly Stable ZnO Thin Films by Atomic Layer Deposition
• Growth of Transparent Conductive Oxide ZnO Films by Atomic Layer Deposition
• Polycrystalline Cu(InGa)Se_2 Thin-Film Solar Cells with ZnSe Buffer Layers
• Photoinduced Oxidation of Epitaxial Ga_2Se_3 Grown by Molecular Beam Epitaxy
• Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
• Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
• Control of the Arrangement of the Native Gallium Vacancies in Ga_2Se_3 on (100)GaAs by Molecular Beam Epitaxy
• Formation of ZnGa_2Se_4 Epitaxial Layer during Molecular Beam Epitaxial Growth of Ga_2Se_3 on ZnSe
• Raman Study of Epitaxial Ga_2 Se_3 Films Grown by Molecular Beam Epitaxy
• Optical Anisotropy of Vacancy-Ordered Ga_2Se_3 Grown by Molecular Beam Epitaxy
• Metalorganic Chemical Vapor Deposition of ZnO Using D_2O as Oxidant
• Optimization of ZnO Films for Amorphous Silicon Solar Cells
• Large-Area ZnO Thin Films for Solar Cells Prepared by Photo-Induced Metalorganic Chemical Vapor Deposition
• Mobility Enhancement of Textured ZnO Films by Ultraviolet Light Irradiation
• Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with SiH_2Cl_2
• p-Type a-SiC:H Films Using Triethylboron and Its Application to Solar Cells
• Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition
• Heavily P-Doped (>10^ cm) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250℃
• Photochemical Vapor Deposition of Si/Si_Ge_x Strained Layer Superlattices at 250℃ : Silicon Heterostructures(Solid State Devices and Materials 1)
• Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250℃
• ZnSe:Mn DC-Electroluminesent Cells Using Di-π-Cyclopentadienyl Manganese as a New Manganese Source Fabricated by Plasma-Assisted MOCVD
• Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
• Preparation of Hydrogenated Amorphous Silicon Carbon Nitride Films by Hot-Wire Chemical Vapor Deposition Using Hexamethyldisilazane for Silicon Solar Cell Applications
• Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
• Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
• Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications
• TiO_2-Coated Transparent Conductive Oxide (SnO_2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen
• Intrinsic Microcrystalline Silicon Thin Films Prepared by Hot-Wire Cell Method and Their Application to Solar Cells
• Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature
• 2-Step Growth Method and Microcrystalline Silicon Thin Film Solar Cells Prepared by Hot Wire Cell Method
• Highly Conductive Boron Doped Microcrystalline Si Films Deposited by Hot Wire Cell Method and its Application to Solar Cells
• Heavily Carbon-Doped P-Type GaAs Grown on GaAs Substrates with Various Orientations by Metalorganic Molecular Beam Epitaxy
• High Quality Amorphous Silicon Films Prepared by Atmospheric-Pressure Photo-CVD : Condensed Matter
• Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si: H, F)
• High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
• High-Efficiency Delta-Doped Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition
• Junction Properties of nip and pin Amorphous Si Solar Cells Prepared by a Glow Discharge in Pure Silane : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
• High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
• Structural Analysis of Side and SiGeC Alloys by Ab Initio Total-Energy Calculations
• Structural Analysis of SiGeC Alloys by ab initio Total-Energy Calculations
• Fabrication of Sub-Micron Gap Structures using Directly-Deposited Amorphous Carbon Wires
• Development of Polycrystalline Culn_xGa_Se_2 Thin-Film Solar Cells with Band Gap of 1.3 to 1.5 eV
• C Stability in Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
• Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures
• Characterization of Hydrogen in Epitaxial Silicon Films Grown at Very Low Temperatures
• Low-temperature Deposition of Hydrogenated Microcrystalline Silicon Thin Films by Photochemical Vapor Deposition Technique and Their Application to Thin Film Solar Cells
• Effects of Temperature and Spectral Irradiance on Performance of Silicon-Based Thin Film Multijunction Solar Cells
• Effect of the Structural Change of Hydrogenated Microcrystalline Silicon Thin Films Prepared by Hot-Wire Chemical Vapor Deposition
• p-Ga_Al_As/p-Ga_Al_yAs/n-Ga_Al_yAs Solar Cells : II-1: COMPOUND SOLAR CELLS
• Amorphous Silicon Thin Films Prepared by Hot Wire Cell Method and Its Application to Solar Cells
• Analysis of H_2-Dilution Effects on Photochemical Vapor Deposition of Si Thin Films
• Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature (
• Room Temperature Operation of Amorphous Carbon-Based Single-Electron Transistors Fabricated by Beam-Induced Deposition Techniques

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