Tokumitsu E | Tokyo Inst. Technol. Yokohama Jpn
スポンサーリンク
概要
関連著者
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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TOKUMITSU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Yoon Sung-min
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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ISHIWARA Hiroshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TAKAHASHI Kiyoshi
Department of Medicine, National Minami-Okayama Hospital
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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TOKUMITSU Eisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
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YOON Sung-Min
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Takahashi Kouchiro
National Institute For Research In Inorganic Materials
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Yamada Takumi
Department of Cardiology, Nagoya University Graduate School of Medicine
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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Yamada T
Tokai Univ. Hiratsuka Jpn
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Takahashi K
National Inst. Res. In Inorganic Materials Ibaraki Jpn
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Osada M
National Inst. For Materials Sci. Tsukuba Jpn
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SAITO Koki
Department of Electronics and Information Science, Teikyo University of Science and Technology
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Sato K
Depertment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Saito K
Department Of Materials Technology Chiba University
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Sato Kuninori
Institute For Fusion Science
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Takahashi K
Department Of Physical Electronics Tokyo Institute Of Tecnology
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SHIRAHAMA Masanori
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Sato K
Department Of Electronics And Information Science Teikyo University Of Science And Technology
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KURITA Yuji
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kurita Yoichiro
Tokyo Institute Of Technology Precision & Intelligence Laboratory
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SUGITA Naoki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ohmi Shun-ichiro
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Takahashi Kuniharu
Graduate School Of Science And Technology Niigata University
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Sugita Naoki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Sugita Naoki
Laboratory Of Organic Chemistry Faculty Of Engineering Kanagawa University
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Saito K
Nagaoka National Coll. Technol. Nagaoka Jpn
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Kurita Yuji
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
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Nakamura Ryohei
Hitachi Metals Ltd.
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Shimamura Toshishige
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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IMADA Shogo
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Shirahama Masanori
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Shirahama Masanori
System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush
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Saito K
Application Laboratory
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Kurita Y
Chuo Univ. Tokyo Jpn
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OKAMOTO Kojiro
Frontier Collaborative Research Center, Tokyo Institute of Technology
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FUJII Gen
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Imada Shogo
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Okamoto Kojiro
Frontier Collaborative Research Center Tokyo Institute Of Technology
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ITANI Kensuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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SHOURIKI Shigeto
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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ICHIKI Tatsuya
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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NAKAMURA Ryo-ichi
Precision & Intelligence Lab. Tokyo Institute of Technology
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Fujii Gen
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Itani Kensuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ichiki Tatsuya
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shouriki Shigeto
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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TAKAHASHI Kenji
Semiconductor Research Laboratory, Pioneer Electronic Corporation
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Tokumitsu Eisuke
Precision and Intelligence Laboratory of Tokyo Institute of Technology
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Osada Minoru
Advanced Materials Laboratory, National Institute for Materials Science
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Nagao K
Univ. Tokyo Tokyo Jpn
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Osada Minoru
Presto Japan Science And Technology Corporation (jst)
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Moon B‐k
Infineon Technol. Yokohama Jpn
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KIMURA Ryuhei
Department of Information Science and Electronics, Teikyo University of Science and Technology
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Matsumoto Kazuhiko
Electrotechnical Laboratory (etl)
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Okamoto Kenji
Department Of Applied Physics Osaka University
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KAKIHANA Masato
Materials and Structures Laboratory Tokyo Institute of Technology
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Yamada T
Ntt Basic Research Laboratories:(present Address) Ntt Opto-electronics Laboratories
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Katoh Toshiaki
Department Of Electronic Engineering Faculty Of Engineering Mie University
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Katoh Toshiaki
Department Of Physical Electronics Tokyo Institute Of Technology
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NAGAO Keisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NOZAKI Shinji
Department of Physical Electronics, Tokyo Institute of Technology
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SHIRAKASHI Junichi
Department of Physical Electronics, Tokyo Institute of Technology
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QI Ming
Department of Physical Electronics, Tokyo Institute of Technology
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AKATSUKA Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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KUDOU Yoshimitsu
Department of Physical Electronics, Tokyo Institute of Technology
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FUKAMACHI Taichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Nagao Keisuke
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yamada Tomoyuki
Research Laboratory Oki Electric Industry Co. Ltd.
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Moriwaki Masashi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Fukamachi Taichi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Matsumoto Kazuhiko
Electrotechnical Laboratory (elt)
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Nagao Keisuke
Department Of Applied Physics Faculty Of Science Okayama University Of Science
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Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
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Yamada T
Department Of Electrical And Electronics Engineering Sophia University
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Qi Ming
Department Of Physical Electronics Tokyo Institute Of Technology
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Nozaki S
Univ. Electro‐communications Tokyo
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Nozaki Shinji
Department Of Communications And Systems The University Of Electro-communications
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Kimura R
Chiba Univ. Chiba Jpn
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Kimura Ryuhei
Department Of Electronics And Information Science Undergraduate School Of Science And Engineering Te
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Park Byung-eun
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Kuraoka Takuya
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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KURAOKA Takuya
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Akatsuka Takeshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Shirakashi Junichi
Electrotechnical Laboratory
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Kudou Yoshimitsu
Department Of Physical Electronics Tokyo Institute Of Technology
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Kamei T
Department Of Communications Engineering National Defense Academy
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Saito K
Av-it Development Group. Sony Corporation
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Kamei Tatsuya
The Authors Are With The Precision And Intelligence Laboratory Tokyo Institute Of Technology
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TOKUMITSU Eisuke
Presision & Intelligence Laboratory, Tokyo Institute of Technology
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Shirakashi Jun-ichi
Electrotechnical Laboratory
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YOSHIHARA Makoto
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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OKAMOTO Takeo
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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MOON Burn-Ki
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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IMADA Shogo
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TOKUMITSU Eisuke
The authors are with the Precision and Intelligence Laboratory, Tokyo Institute of Technology
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ISHIWARA Hiroshi
The authors are with the Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Yoshihara Makoto
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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TOKUMITS Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Okamoto Tomoyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology,
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Okamoto Takeo
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Okamoto Tomoyuki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Matsumoto Kazuhiko
Electrotechnical Laboratory
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Matsumoto Kazuhiko
Electrotechnical Labs
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Kakihana Masato
Materials & Structures Laboratory Tokyo Institute Of Technology
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Aizawa Koji
Department of Physiology, Tokyo Medical University
著作論文
- Characterization of Carbon-Doped GaAs Grown by Molecular Beam Epitaxy Using Neopentane as Carbon Source
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Preparation of GaAs and Ga_Al_xAs Multi-Layer Structures by Metalorganic Molecular Beam Epitaxy
- Metalorganic Molecular-Beam Epitaxial Growthand Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources
- In Situ Raman Spectroscopy Observation of Crystallization Process of Sol-Gel Derived Bi_La_x Ti_3O_ Films
- Characterization of Sol-gel Derived Bi_La_xTi_3O_ Films
- Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
- Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
- Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
- Electrical Characteristics of Neuron Pulse Oscillation Circuits Using Complementary Unijunction Transistors and MOSFETs
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
- Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
- Electrical Properties of Ferroelectric Gate HEMT Structures
- Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures
- Crystalline Quality and Electrical Properties of PbZr_xTi_O_3 Thin Films Prepared on SrTiO_3-Covered Si Substrates
- Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
- Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
- Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Growth and Crystallinity of Ferroelectric BaMgF_4 Films on (111)-Oriented Pt Films
- Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation
- Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures
- Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write Operation
- Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures
- Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZr_xTi_O_3 (PZT) Films