Ishiwara Hiroshi | Department Of Applied Electronics Tokyo Institute Of Technology
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概要
関連著者
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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TOKUMITSU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Furukawa Seijiro
Department Of Applied Electronics Graduate School Of Science And Technology
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Yoon Sung-min
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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ISHIWARA Hiroshi
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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Furukawa Seijiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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ISHIWARA Hiroshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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FURUKAWA Seijiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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Tamura T
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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ARIMOTO Yoshihiro
System LSI Development Labs., FUJITSU LABORATORIES LTD.
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Arimoto Y
System Lsi Development Labs. Fujitsu Laboratories Ltd.
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YAMAMOTO Hiroshi
Department of Macromolecular Science, Graduate School of Science, Osaka University
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YOON Sung-Min
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Yamamoto H
Sharp Corp. Nara Jpn
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Yamamoto H
College Of Science And Technology Nihon University
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FURUKAWA Seigo
Department of Electronics, Nippondenso Technical College
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Furukawa S
Kyushu Inst. Technology Fukuoka Jpn
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Yamamoto Hiroshi
Department Of Energy Engineering And Science Nagoya University
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TAMURA Tetsuro
R&D Association for Future Electron Devices, Frontier Collaborative Research Center, Tokyo Institute
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Yamamoto Hiroshi
Departmemt Of Chemical Engineering University Of Tokyo
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Kijima T
Functional Devices Laboratories Sharp Corporation
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Kijima Takeshi
Technology Platform Research Center Seiko Epson Corporation
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IMADA Shogo
Frontier Collaborative Research Center, Tokyo Institute of Technology
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ARIMOTO Yoshihiro
Memory Device Lab., Fujitsu Laboratories Ltd.
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OKAMOTO Kojiro
Frontier Collaborative Research Center, Tokyo Institute of Technology
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FUJII Gen
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Imada Shogo
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Okamoto Kojiro
Frontier Collaborative Research Center Tokyo Institute Of Technology
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SHOURIKI Shigeto
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Fujisaki Y
R&d Association For Future Electron Devices
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Fujii Gen
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Shouriki Shigeto
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Liao Min
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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INOUE Osamu
Department of Clinical and Laboratory Medicine, Faculty of Medicine, University of Yamanashi
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OHMI Shun-ichiro
Tokyo Institute of Technology
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KIJIMA Takeshi
Technology Platform Research Center, SEIKO EPSON CORPORATION
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Kim Hyun-soo
Department Of Internal Medicine Chonnam National University Medical School
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Okamoto Kenji
Department Of Applied Physics Osaka University
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TAMURA Masao
Central Research Laboratory, Hitachi, Ltd.
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Matsumura Hideki
Department Of Applied Electronics Tokyo Institute Of Technology
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Matsumura Hideki
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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FURUKAWA Seijiro
Graduate School of Science and Engineering, Tokyo Institute of technology
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ISHIWARA Hiroshi
Graduate School of Science
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KATO Kazumi
National Institute of Advanced Industrial Science and Technology (AIST)
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Ohmi Shun‐ichiro
Tokyo Inst. Technol. Yokohama Jpn
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Ohmi Shunichiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Saitoh Shuichi
Department Of Applied Electronics Tokyo Institute Of Technology
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KURITA Yuji
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kurita Yoichiro
Tokyo Institute Of Technology Precision & Intelligence Laboratory
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Kurita Yuji
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
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Kato Kazumi
National Inst. Of Advanced Industrial Sci. And Technol. (aist)
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Tamura Masao
Central Research Laboratory
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ISHIKAWA Toru
R&D Association for Future Electron Devices
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FUCHIKAMI Takaaki
R&D Association for Future Electron Devices
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OHKI Hiroshi
R&D Association for Future Electron Devices
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Hoko Hiromasa
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Hikosaka Kohki
Department Of Applied Electronics Tokyo Institute Of Technology:(present Address) Fujitsu Laboratori
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Park Byung-eun
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Kijima Takeshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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TOKUYAMA Takashi
Central Research Laboratory
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Kuraoka Takuya
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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KURAOKA Takuya
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Kamei T
Department Of Communications Engineering National Defense Academy
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Ishiwara Hiroshi
Tokyo Institute Of Technology
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Kurita Y
Chuo Univ. Tokyo Jpn
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Kamei Tatsuya
The Authors Are With The Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tabuchi Yoshiaki
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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HASEGAWA Satoshi
Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering
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TAMURA Tetsuro
Silicon Technology Lab., FUJITSU LABORATORIES LTD.
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ARIMOTO Yoshihiro
O Ishiwara Lab.
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ISHIWARA Hiroshi
F-project, FUJITSU LABORATORIES LTD.
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KIJIMA Takeshi
R&D Association for Future Electron Devices
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FUJISAKI Yoshihisa
R&D Association for Future Electron Devices
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TOKUMITSU Eisuke
Presision & Intelligence Laboratory, Tokyo Institute of Technology
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FUJISAKI Yoshihisa
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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IMADA Shogo
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TOKUMITSU Eisuke
The authors are with the Precision and Intelligence Laboratory, Tokyo Institute of Technology
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ISHIWARA Hiroshi
The authors are with the Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Furukawa Seijiro
Department Of Applied Electronics Tokyo Institute Of Technology
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Kato Kazumi
National Industrial Research Institute Of Nagoya
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Kato Kazumi
National Institute Of Advanced Industrial Science And Technology
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Shimizu Tatsuo
Department Of Electronics Faculty Of Technology Kanazawa University
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Kijima Takeshi
Functional Devices Laboratories Sharp Corporaton
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Hasegawa Seiichi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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Hasegawa Satoshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Furukawa Seijiro
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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NAGATOMO Masao
Department of Applied Electronics, Tokyo Institute of Technology
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Nagatomo Masao
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Konkuk Univ.
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ARIMOTO Yoshihiro
F-project, FUJITSU LABORATORIES LTD.
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Inoue Osamu
Department Of Clinical And Laboratory Medicine Faculty Of Medicine University Of Yamanashi
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Inoue Osamu
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Department Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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SONG Younguk
Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Song Younguk
Department Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Liao Min
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Fujisaki Yoshihisa
R&D Association for Future Electron Devices
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Ohmi Shun-ichiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Fuchikami Takaaki
R&D Association for Future Electron Devices, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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ISHIWARA Hiroshi
Department of Applied Electronics, Tokyo Institute of Technology
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ISHIWARA Hiroshi
Department of Electronics and Systems, Faculty of Coordinated Sciences, Tokyo Institute of Technology
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Kim Hyun-Soo
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ishiwara Hiroshi
Department of Physics, Division of Quantum Phases and Devices, Konkuk University, Seoul 143-701, Korea
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Ishikawa Toru
R&D Association for Future Electron Devices, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Ohki Hiroshi
R&D Association for Future Electron Devices, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Inoue Osamu
Department of Chemistry, Faculty of Science, Toyama University
著作論文
- Theoretical Considerations on Lateral Spread of Implanted Ions
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
- Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
- Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
- Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
- Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
- Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface
- Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
- Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
- Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- The Lattice Location of Phosphorus Atoms Implanted into Silicon
- Fabrication and Characterization of 1 k-bit 1T2C-Type Ferroelectric Memory Cell Array
- Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
- Mass Dependence of Critical Amorphizing Dose in Ion Implantation
- Studies on Formation Characteristics and Mechanism of SiC on Si and Metal-Silicides by Using Ion Backscattering Techniques
- Experimental Simulation on the Beam Heating Effects in Ion Implantation Techniques
- Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal-Oxide-Semiconductor Diodes with Yb Donor Layer
- Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors