Ishiwara Hiroshi | Frontier Collaborative Research Center Tokyo Insitute Of Technology
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関連著者
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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TOKUMITSU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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Wang Xusheng
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Tamura T
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Kijima Takeshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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ARIMOTO Yoshihiro
System LSI Development Labs., FUJITSU LABORATORIES LTD.
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TAMURA Tetsuro
R&D Association for Future Electron Devices, Frontier Collaborative Research Center, Tokyo Institute
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Arimoto Y
System Lsi Development Labs. Fujitsu Laboratories Ltd.
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Kim Hyun-soo
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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OHKI Hiroshi
R&D Association for Future Electron Devices
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Kang Seung-kuk
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kijima T
Functional Devices Laboratories Sharp Corporation
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Kijima Takeshi
Technology Platform Research Center Seiko Epson Corporation
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OGASAWARA Satoru
R&D Association for Future Electron Devices
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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ARIMOTO Yoshihiro
Memory Device Lab., Fujitsu Laboratories Ltd.
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KIJIMA Takeshi
R&D Association for Future Electron Devices
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FUJISAKI Yoshihisa
R&D Association for Future Electron Devices
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OKAMOTO Kojiro
Frontier Collaborative Research Center, Tokyo Institute of Technology
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FUJISAKI Yoshihisa
Frontier Collaborative Research Center, Tokyo Institute of Technology
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FUJISAKI Yoshihisa
Research and Developmetn Association of Future Electron Devices
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Okamoto Kojiro
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Fujisaki Y
R&d Association For Future Electron Devices
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Iseki Kunie
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kato Takumi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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KIJIMA Takeshi
Technology Platform Research Center, SEIKO EPSON CORPORATION
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Kim Hyun-soo
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
R & D Association For Future Electron Devices Co Frontier Collaborative Research Center Tokyo In
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Okamoto Kenji
Department Of Applied Physics Osaka University
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Kuroiwa Takeharu
R&d Associations For Future Electron Devices:frontier Collaborative Research Center Tokyo Instit
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Sugahara Kazuyuki
R&d Associations For Future Electron Devices:frontier Collaborative Research Center Tokyo Instit
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FUNAKUBO Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Funakubo Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kang S‐k
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Koo Bon
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Kijima T
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kijima Takeshi
R&d Associations For Future Electron Devices:frontier Collaborative Research Center Tokyo Instit
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YOON Sung-Min
R&D Association for Future Electron Devices
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JIMBO Takehito
Frontier Collaborative Research Center, Tokyo Institute of Technology
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SANO Haruyuki
Frontier Collaborative Research Center, Tokyo Institute of Technology
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TAKAHASHI Yuji
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Sano Haruyuki
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Aizawa Koji
Precision And Interlligence Laboratory Tokyo Institute Of Technology
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Kuraoka Takuya
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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IMADA Shogo
Frontier Collaborative Research Center, Tokyo Institute of Technology
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KURAOKA Takuya
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Ogata N
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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WANG Xusheng
Functional Materials Research Laboratory, Tongji University
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Wang X
Functional Materials Research Laboratory Tongji University
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SATO Takehiko
R&D Associations for Future Electron Devices
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KUROIWA Takeharu
R&D Associations for Future Electron Devices
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SUGAHARA Kazuyuki
R&D Associations for Future Electron Devices
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ARIMOTO Yoshihiro
O Ishiwara Lab.
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ISHIWARA Hiroshi
F-project, FUJITSU LABORATORIES LTD.
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KATO Takumi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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TOKUMITSU Eisuke
Presision & Intelligence Laboratory, Tokyo Institute of Technology
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Ishiwara H
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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ISEKI Kunie
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Imada Shogo
Frontier Collaborative Research Center Tokyo Institute Of Technology
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YOON Sung-Min
R & D Association for Future Electron Devices, co Frontier Collaborative Research Center, Tokyo Inst
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OGATA Nobuhito
R&D Association for Future Electron Devices
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Ogasawara S
R&d Assoc. Future Electron Devices Tokyo Jpn
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Ogasawara Satoru
R&d Association For Future Electron Devices
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Fujisaki Yoshihide
Nhk Science & Technical Research Laboratories
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TAKAHASHI Daisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kijima Takeshi
Functional Devices Laboratories Sharp Corporaton
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Kikuchi Shin
R&D Association for Future Electron Devices, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Kikuchi Shin
R&d Association For Future Electron Devices
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Takahashi Yuji
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Takahashi Daisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology:precision And Intelligence Labo
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ARIMOTO Yoshihiro
F-project, FUJITSU LABORATORIES LTD.
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Sato Takehiko
R&d Associations For Future Electron Devices:frontier Collaborative Research Center Tokyo Instit
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Ishiwara Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Wang Xusheng
R&D Association for Future Electron Device, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Koo Bon
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Wang Xusheng
R&D Association for Future Electron Device, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Fujisaki Yoshihisa
R&D Association for Future Electron Devices
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Fujisaki Yoshihisa
R&D Association for Future Electron Device, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Ohki Hiroshi
R&D Association for Future Electron Device, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Kato Takumi
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Kijima Takeshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Iseki Kunie
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
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Ishiwara Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
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Fujisaki Yoshihisa
Research and Development Association of Future Electron Devices, Hatsumei-Kaikan Build. 5F, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
著作論文
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell(Special Issue on Nonvolatile Memories)
- Preparation of SrBi_2Ta_2O_9 Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using a Double Alcoholate Source
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Proposal of a Planar 8F^2 1T2C-Type Ferroelectric Memory Cell
- Data Retention Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Diodes with SrBi_2Ta_2O_9 Ferroelectrics and Al_2O_3 Buffer Layers
- Preaparation of Ferroelectric Thin Films Using Sol-Gel Solutions Dissolved in Supercritical Carbon Dioxide
- A New Circuit Simulation Model of Ferroelectric Capacitors
- Preparation of Bi_La_Ti_3O_ Films on Ruthenium Electrodes
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- A Novel SPICE Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Correlation between Ferroelectricity and Grain Structures of Face-to-Face Annealed Strontium Bismuth Tantalate Thin Films
- Significant Enhancement of Bi_La_Ti_3O_ Ferroelectricity Derived by Sol-Gel Method
- Si-Substituted Ultrathin Ferroelectric Films : Electrical Properties of Condensed Matter
- Write and Read-Out Operations of Novel 1T2C-Type Ferroelectric Memory Cells with an Array Structure : Electrical Properties of Condensed Matter
- Low-Temperature Synthesis of SrBi_2Ta_2O_9 Thin Films with Bi_2SiO_5-Containing Seed Layers : Surfaces, Interfaces, and Fiims
- Sol-Gel Derived Ferroelectric Pb(Zr_Ti_x)O_3-SiO_2-B_2O_3 Glass-Ceramic Thin Films Formed at Relatively Low Annealing Temperatures
- A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Improvement of Electrical Property of Sol-Gel-Derived Lead Zirconate Titanate Thin Films by Multiple Rapid Thermal Annealing : Surfaces, Interfaces, and Films
- Structural and Electrical Properties of Ferroelectric Pb(Zr1-xTix)O3–SiO2 Glass–Ceramic Thin Films Derived by the Sol–Gel Method
- Characteristics of LaAlO_3 as Insulating Buffer Layers of Ferroelectric-Gate Field Effect Transistors
- Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell with Local Interconnections
- Characterization of Metal-Ferroelectric-(Metal-)Insulator-Semiconductor(MF(M)IS)Structures Using(Pb, La)(Zr, Ti)O_3 and Y_2O_3 Films
- Improvement of Ferroelectric Properties in RF-Magnetron-Sputtered SrBi2Ta2O9 Thin Films by Addition of Si Atoms
- Praseodymium-Substituted Strontium Bismuth Tantalate Films with Saturated Remanent Polarization at 1 V
- Improved Data Disturbance Effects in 1T2C-Type Ferroelectric Memory Array
- Characteristics of Paired Bi(4-x)LaxTi3O12 (BLT) Capacitors Suitable for 1T2C-Type FeRAM
- Damage-Free and Hydrogen-Free Nitridation of Silicon Substrate by Nitrogen Radical Source
- Improvement of Ferroelectric Properties in Mo-Substituted Bi3.35La0.75Ti3O12 Films by Optimization of Heating Rate
- Characterization of Si- and Mo-codoped Bi3.35La0.75Ti3O12 Ferroelectric Thin Films
- A Novel Simulation Program with Integrated Circuit Emphasis (SPICE) Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
- Preparation of Ferroelectric Thin Films Using Sol-Gel Solutions Dissolved in Supercritical Carbon Dioxide
- Significant Enhancement of Bi3.45La0.75Ti3O12 Ferroelectricity Derived by Sol-Gel Method