TOKUMITSU Eisuke | Precision and Intelligence Laboratory, Tokyo Institute of Technology
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概要
- TOKUMITSU Eisukeの詳細を見る
- 同名の論文著者
- Precision and Intelligence Laboratory, Tokyo Institute of Technologyの論文著者
関連著者
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TOKUMITSU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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ISHIWARA Hiroshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Yoon Sung-min
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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YOON Sung-Min
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Osada M
National Inst. For Materials Sci. Tsukuba Jpn
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KURITA Yuji
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kurita Yoichiro
Tokyo Institute Of Technology Precision & Intelligence Laboratory
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SUGITA Naoki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Sugita Naoki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Sugita Naoki
Laboratory Of Organic Chemistry Faculty Of Engineering Kanagawa University
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Kurita Yuji
Department Of Applied Chemistry Faculty Of Science And Engineering Chuo University
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Shimamura Toshishige
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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IMADA Shogo
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Kurita Y
Chuo Univ. Tokyo Jpn
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OKAMOTO Kojiro
Frontier Collaborative Research Center, Tokyo Institute of Technology
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FUJII Gen
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Imada Shogo
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Okamoto Kojiro
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Fujii Gen
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision and Intelligence Laboratory of Tokyo Institute of Technology
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Osada Minoru
Advanced Materials Laboratory, National Institute for Materials Science
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Osada Minoru
Presto Japan Science And Technology Corporation (jst)
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Moon B‐k
Infineon Technol. Yokohama Jpn
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Okamoto Kenji
Department Of Applied Physics Osaka University
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KAKIHANA Masato
Materials and Structures Laboratory Tokyo Institute of Technology
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FUNAKUBO Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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徳光 永輔
東京工業大学精密工学研究所
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SAIKI Hirokazu
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Moriwaki Masashi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Funakubo Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Nakamura Ryohei
Hitachi Metals Ltd.
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JIMBO Takehito
Frontier Collaborative Research Center, Tokyo Institute of Technology
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SANO Haruyuki
Frontier Collaborative Research Center, Tokyo Institute of Technology
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TAKAHASHI Yuji
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Sano Haruyuki
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kuraoka Takuya
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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KURAOKA Takuya
Frontier Collaborative Research Center, Tokyo Institute of Technology
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TANISAKE Noriaki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kamei T
Department Of Communications Engineering National Defense Academy
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Tanisake Noriaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Kamei Tatsuya
The Authors Are With The Precision And Intelligence Laboratory Tokyo Institute Of Technology
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TOKUMITSU Eisuke
Presision & Intelligence Laboratory, Tokyo Institute of Technology
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YOSHIHARA Makoto
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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OKAMOTO Takeo
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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ITANI Kensuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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MOON Burn-Ki
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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IMADA Shogo
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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SHOURIKI Shigeto
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TOKUMITSU Eisuke
The authors are with the Precision and Intelligence Laboratory, Tokyo Institute of Technology
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ISHIWARA Hiroshi
The authors are with the Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Yoshihara Makoto
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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ICHIKI Tatsuya
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TOKUMITS Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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NAKAMURA Ryo-ichi
Precision & Intelligence Lab. Tokyo Institute of Technology
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Okamoto Takeo
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Itani Kensuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ichiki Tatsuya
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shouriki Shigeto
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Takahashi Yuji
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology:precision And Intelligence Labo
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Kakihana Masato
Materials & Structures Laboratory Tokyo Institute Of Technology
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Aizawa Koji
Department of Physiology, Tokyo Medical University
著作論文
- In Situ Raman Spectroscopy Observation of Crystallization Process of Sol-Gel Derived Bi_La_x Ti_3O_ Films
- Characterization of Sol-gel Derived Bi_La_xTi_3O_ Films
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
- Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
- Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
- Electrical Characteristics of Neuron Pulse Oscillation Circuits Using Complementary Unijunction Transistors and MOSFETs
- Data Retention and Readout Degradation Properties of Pt/Sr_Sm_Bi_Ta_2O_9/HfO_2/Si Structure Ferroelectric-Gate Field Effect Transistors
- Preparation of SrBi_2Ta_2O_9 Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using a Double Alcoholate Source
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Partial Switching Kinetics of Ferroelectric PbZr_xTi_O_3 Thin Films Prepared by Sol-Gel Technique ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
- Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
- Electrical Properties of Ferroelectric Gate HEMT Structures
- Crystalline Quality and Electrical Properties of PbZr_xTi_O_3 Thin Films Prepared on SrTiO_3-Covered Si Substrates
- Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
- Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Growth and Crystallinity of Ferroelectric BaMgF_4 Films on (111)-Oriented Pt Films
- Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation
- Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures
- Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write Operation