Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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Yoon Sung-min
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Yoon Sung-min
R&d Association For Future Electron Devices:frontier Collaborative Research Center Tokyo Institu
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TOKUMITSU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
関連論文
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- Characterization of Sol-gel Derived Bi_La_xTi_3O_ Films
- Theoretical Considerations on Lateral Spread of Implanted Ions
- Formation and Characterization of Epitaxial TiO_2 and BaTiO_3/TiO_2 Films on Si Substrate
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
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- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- Single Crystalline Silicide Formation
- Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
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- Experimental Simulation on the Beam Heating Effects in Ion Implantation Techniques
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