Damage-Free and Hydrogen-Free Nitridation of Silicon Substrate by Nitrogen Radical Source
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概要
- 論文の詳細を見る
New damage free nitridation process of a silicon substrate is proposed with the use of a nitrogen radical source. The process also realized the hydrogen-free film that ensured high resistance against high temperature oxidation processes. It was also found that thicker than 3 nm films could be synthesized at room temperature using atomic N radicals. The metal insulator semiconductor (MIS) diode composed of radical nitride Si_3N_4 shows no hysteresis in capacitance voltage characteristics even after the annealing at 950℃. It was demonstrated that the application of Si_3N_4 films to the most advanced field effect transistors became much easier than the conventional processes with the use of radical nitridation.
- 社団法人応用物理学会の論文
- 2000-11-01
著者
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ISHIWARA Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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FUJISAKI Yoshihisa
Frontier Collaborative Research Center, Tokyo Institute of Technology
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