A New Circuit Simulation Model of Ferroelectric Capacitors

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• ISHIWARA Hiroshi

  Frontier Collaborative Research Center, Tokyo Institute of Technology

• Ishiwara Hiroshi

  Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Department Of Applied Electronics Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering

• Ishiwara Hiroshi

  Precision And Intelligence Laboratory Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Precision & Intelligence Laboratory Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc

• Ishiwara H

  Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering

• Tamura T

  Silicon Technology Lab. Fujitsu Laboratories Ltd.

• Ishiwara Hiroshi

  Frontier Collaborative Research Center Tokyo Insitute Of Technology

• ARIMOTO Yoshihiro

  System LSI Development Labs., FUJITSU LABORATORIES LTD.

• TAMURA Tetsuro

  R&D Association for Future Electron Devices, Frontier Collaborative Research Center, Tokyo Institute

• ARIMOTO Yoshihiro

  Memory Device Lab., Fujitsu Laboratories Ltd.

• Arimoto Y

  System Lsi Development Labs. Fujitsu Laboratories Ltd.

関連論文

• Formation of Ferroelectric BaMgF_4 Films on GaAs Substrates
• Theoretical Considerations on Lateral Spread of Implanted Ions
• Formation and Characterization of Epitaxial TiO_2 and BaTiO_3/TiO_2 Films on Si Substrate
• Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
• Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
• Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
• Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
• Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
• Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
• Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
• Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
• Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
• Single Crystalline Silicide Formation
• Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
• Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
• Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
• Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
• Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
• Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
• Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
• Electrical Characteristics of Neuron Pulse Oscillation Circuits Using Complementary Unijunction Transistors and MOSFETs
• Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array
• Improved Data Disturbance Effects in 1T2C-Type Ferroelectric Memory Array
• Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell(Special Issue on Nonvolatile Memories)
• Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
• Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
• On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
• Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
• Preparation of SrBi_2Ta_2O_9 Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using a Double Alcoholate Source
• Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure
• Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
• Partial Switching Kinetics of Ferroelectric PbZr_xTi_O_3 Thin Films Prepared by Sol-Gel Technique ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
• Proposal of a Planar 8F^2 1T2C-Type Ferroelectric Memory Cell
• Characteristics of Paired Bi_La_xTi_3O_ (BLT) Capacitors Suitable for 1T2C-Type FeRAM
• Ferroelectric Characteristics Control of (Bi,La)_4Ti_3O_ and SrBi_2Ta_2O_9 Films by Addition of Silicates and Germanates
• Growth of Crystalline SrTiO_3 Films on Si Substrates Using Thin Fluoride Buffer Layers and Their Electrical Properties
• Data Retention Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Diodes with SrBi_2Ta_2O_9 Ferroelectrics and Al_2O_3 Buffer Layers
• Properties of Ferroelectric BaMgF_4 on Si(100), (110) and (111) Substrates Obtained by Post-Deposition Rapid Thermal Annealing
• Substrate Orientation Dependence of the Properties of Metal-Ferroelectric BaMgF_4-Silicon Capacitors by Post-Deposition Annealing
• Preaparation of Ferroelectric Thin Films Using Sol-Gel Solutions Dissolved in Supercritical Carbon Dioxide
• Multi-bit Programming for 1T-FeRAM by Local Polarization Method
• A New Circuit Simulation Model of Ferroelectric Capacitors
• Preparation of Bi_La_Ti_3O_ Films on Ruthenium Electrodes
• A New Circuit Simulation Model of Ferroelectric Capacitors
• A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
• Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
• A Novel Simulation Program with Integrated Circuit Emphasis (SPICE) Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
• Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
• Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
• A Novel SPICE Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
• Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
• Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
• Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
• Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface
• Electrical Properties of Ferroelectric BaMgF_4 Films on Si Substrates ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Correlation between Ferroelectricity and Grain Structures of Face-to-Face Annealed Strontium Bismuth Tantalate Thin Films
• A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
• Significant Enhancement of Bi_La_Ti_3O_ Ferroelectricity Derived by Sol-Gel Method
• Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates
• Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
• Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation
• Electrical Properties of Ferroelectric Gate HEMT Structures
• Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures
• Crystalline Quality and Electrical Properties of PbZr_xTi_O_3 Thin Films Prepared on SrTiO_3-Covered Si Substrates
• Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
• Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
• Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• Electrical Properties of Gallium Fluoride(GaF_3)/GaAs Interface with and without Sulfur Treatment
• Growth and Crystallinity of Ferroelectric BaMgF_4 Films on (111)-Oriented Pt Films
• Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation
• Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures
• Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write Operation
• Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures
• Ferroelectric Properties of BaMgF_4 Films Grown on Si(100), (111), and Pt(111)/SiO_2/Si(100) Structures
• Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZr_xTi_O_3 (PZT) Films
• Lattice Parameter Control of Epitaxially Grown Hexagonal LaF_3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF_3
• Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
• Preparation of PbTiO_3 Films Utilizing Self-Control Mechanism of Stoichiometric Composition in Dual-Beam Vacuum Evaporation Method
• Enhanced Growth Mechanism in Lateral Solid-Phase Epitaxy of Si Films Simultaneously Doped with P and Ge Atoms
• Epitaxial Growth of SrTiO_3 Films on Si (100) Substrates Using a Focused Electron Beam Evaporation Method
• Stress-Induced Anomalous Growth in Lateral Solid-Phase Epitaxy of Ge-Incorporated Si Films
• The Lattice Location of Phosphorus Atoms Implanted into Silicon
• Preparation and Characterization of PZT Thin Films on CeO_2(111)/Si(111) Structures
• X-Ray and Photolumineseence Characterization of a Strain-Free GaAs-on-Si Structure Formed by Anrnealing under Ultrahigh Pressure
• Formation of Conductive SrVO_3 Films on Si Substrates
• Fabrication and Characterization of 1 k-bit 1T2C-Type Ferroelectric Memory Cell Array
• Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
• Proposal of a Novel Ferroelectric-Gate Field Effect Transistor with Separated Functions for Data read-Out and Data Storage
• Mass Dependence of Critical Amorphizing Dose in Ion Implantation
• Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory Weights
• Studies on Formation Characteristics and Mechanism of SiC on Si and Metal-Silicides by Using Ion Backscattering Techniques
• Experimental Simulation on the Beam Heating Effects in Ion Implantation Techniques
• Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer
• Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal-Oxide-Semiconductor Diodes with Yb Donor Layer
• Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
• Damage-Free and Hydrogen-Free Nitridation of Silicon Substrate by Nitrogen Radical Source
• Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication
• Electrical Properties of Ferroelectric Gate HEMT Structures
• Roles of Buffer Layers in Epitaxial Growth of SrTiO_3 Films on Silicon Substrates

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