Ferroelectric Characteristics Control of (Bi,La)_4Ti_3O_<12> and SrBi_2Ta_2O_9 Films by Addition of Silicates and Germanates
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Kijima Takeshi
Research And Development For Future Electron Devices
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Ishiwara Hiroshi
Tokyo Institute Of Technology
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KAWASHIMA Yoshihito
Tokyo Institute of Technology
関連論文
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- Single Crystalline Silicide Formation
- Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
- Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
- Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
- Electrical Characteristics of Neuron Pulse Oscillation Circuits Using Complementary Unijunction Transistors and MOSFETs
- Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
- Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
- Ferroelectric Characteristics Control of (Bi,La)_4Ti_3O_ and SrBi_2Ta_2O_9 Films by Addition of Silicates and Germanates
- Properties of Ferroelectric BaMgF_4 on Si(100), (110) and (111) Substrates Obtained by Post-Deposition Rapid Thermal Annealing
- Substrate Orientation Dependence of the Properties of Metal-Ferroelectric BaMgF_4-Silicon Capacitors by Post-Deposition Annealing
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
- Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
- A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
- Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
- Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation
- Electrical Properties of Ferroelectric Gate HEMT Structures
- Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures
- Crystalline Quality and Electrical Properties of PbZr_xTi_O_3 Thin Films Prepared on SrTiO_3-Covered Si Substrates
- Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
- Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
- Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Electrical Properties of Gallium Fluoride(GaF_3)/GaAs Interface with and without Sulfur Treatment
- Growth and Crystallinity of Ferroelectric BaMgF_4 Films on (111)-Oriented Pt Films
- Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation
- Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures
- Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write Operation
- Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures
- Ferroelectric Properties of BaMgF_4 Films Grown on Si(100), (111), and Pt(111)/SiO_2/Si(100) Structures
- Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZr_xTi_O_3 (PZT) Films
- Lattice Parameter Control of Epitaxially Grown Hexagonal LaF_3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF_3
- Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
- Effect of High-Pressure Oxygen Annealing on Bi_2SiO_5-Added Ferroelectric Thin Films : Electrical Properties of Condensed Matter
- Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
- Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
- PREFACE
- Fabrication process of pentacene-based vertical OFETs with HfO gate insulator (シリコン材料・デバイス)
- Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
- Ferroelectric Characteristics Control of (Bi,La)4Ti3O12 and SrBi2Ta2O9 Films by Addition of Silicates and Germanates
- Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator