Effect of High-Pressure Oxygen Annealing on Bi_2SiO_5-Added Ferroelectric Thin Films : Electrical Properties of Condensed Matter
スポンサーリンク
概要
- 論文の詳細を見る
The crystallization temperature of typical ferroelectric films such as PbZr_<1-x>Ti_xO_3 (PZT), SrBi_2Ta_2O_9 (SBT), and (Bi,La)_4Ti_3O_<12> (BLT) was found to decrease by 150 to 200℃ in a chemical solution deposition method by adding Bi_2SiO_5 (BSO) in the sol-gel solutions. It was also found that the ferroelectric and insulating characteristics of the BSO-added films were significantly improved by annealing in high-pressure oxygen up to 9.9 atms. Three-orders-of-magnitude improvement of the leakage current density was observed in BSO-added BLT films after annealing at 9.9 atms, while pronounced increase of the saturation polarization level was observed in BSO-added SBT and PZT films. From cross-sectional transmission electron microscopy (TEM) observations, the origin of the improved characteristics was speculated to be the structural change of the films.
- 社団法人応用物理学会の論文
- 2002-10-15
著者
-
Idemoto Yasushi
Science University Of Tokyo
-
Kijima T
Research And Development For Future Electron Devices:tokyo Institute Of Technology
-
Kijima Takeshi
Research And Development For Future Electron Devices
-
KAWASHIMA Yoshihito
Tokyo Institute of Technology
-
Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
関連論文
- Ferroelectric Characteristics Control of (Bi,La)_4Ti_3O_ and SrBi_2Ta_2O_9 Films by Addition of Silicates and Germanates
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- Effect of High-Pressure Oxygen Annealing on Bi_2SiO_5-Added Ferroelectric Thin Films : Electrical Properties of Condensed Matter
- Improvement of Ferroelectric Properties in RF-Magnetron-Sputtered SrBi2Ta2O9 Thin Films by Addition of Si Atoms
- Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
- PREFACE
- Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
- Ferroelectric Characteristics Control of (Bi,La)4Ti3O12 and SrBi2Ta2O9 Films by Addition of Silicates and Germanates