Ishiwara Hiroshi | Tokyo Institute Of Technology
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概要
関連著者
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Ishiwara Hiroshi
Tokyo Institute Of Technology
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OHMI Shun-ichiro
Tokyo Institute of Technology
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Liao Min
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Ohmi Shun‐ichiro
Tokyo Inst. Technol. Yokohama Jpn
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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Ishiwara Hiroshi
Konkuk Univ.
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ohmi Shunichiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Kijima Takeshi
Research And Development For Future Electron Devices
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KAWASHIMA Yoshihito
Tokyo Institute of Technology
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SONG Young-Uk
Tokyo Institute of Technology
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Liao Min
Tokyo Institute Of Technology
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ISHIWARA Hiroshi
Department of Physics, Division of Quantum Phases and Devices, Konkuk University
著作論文
- Ferroelectric Characteristics Control of (Bi,La)_4Ti_3O_ and SrBi_2Ta_2O_9 Films by Addition of Silicates and Germanates
- Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
- Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
- PREFACE
- Fabrication process of pentacene-based vertical OFETs with HfO gate insulator (シリコン材料・デバイス)
- Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
- Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator