Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
スポンサーリンク
概要
- 論文の詳細を見る
In order to realize stable n-type characteristics of pentacene for applying to the organic complementary metal-oxide-semiconductor field-effect transistors (CMOS), we have fabricated pentacene based MOS diodes using ultra-thin Yb layer such as 0.5-3nm between gate insulator and pentacene. From the results of capacitance-voltage (C-V) measurements, excellent n-type C-V characteristics of the devices with 1 and 2nm-thick Yb were observed even though the devices were measured in air. These results suggested that the n-type semiconductor characteristics of pentacene are able to be improved by the thin Yb interfacial layer. Furthermore, the improved n-type characteristics of pentacene will enable the fabrication of flexible complementary logic circuits utilizing one kind organic semiconductor.
- （社）電子情報通信学会の論文
- 2011-05-01
著者
-
OHMI Shun-ichiro
Tokyo Institute of Technology
-
Ishiwara Hiroshi
Tokyo Institute Of Technology
-
Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
-
SONG Young-Uk
Tokyo Institute of Technology
関連論文
- Ultrathin HfO_xN_y Gate Insulator Formation by Electron Cyclotron Resonance Ar/N_2 Plasma Nitridation of HfO_2 Thin Films(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
- Modulation of PtSi work function by alloying with low work function metal(Session 7A : Gate Oxides)
- Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Ferroelectric Characteristics Control of (Bi,La)_4Ti_3O_ and SrBi_2Ta_2O_9 Films by Addition of Silicates and Germanates
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels(Novel MOSFET Structures,Fundamentals and Applications of Advanced Semiconductor Devices)
- Effect of High-Pressure Oxygen Annealing on Bi_2SiO_5-Added Ferroelectric Thin Films : Electrical Properties of Condensed Matter
- Improvement of Ferroelectric Properties in RF-Magnetron-Sputtered SrBi2Ta2O9 Thin Films by Addition of Si Atoms
- Modulation of PtSi Work Function by Alloying with Low Work Function Metal
- Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
- Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
- PREFACE
- Fabrication process of pentacene-based vertical OFETs with HfO gate insulator (シリコン材料・デバイス)
- Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
- Ferroelectric Characteristics Control of (Bi,La)4Ti3O12 and SrBi2Ta2O9 Films by Addition of Silicates and Germanates
- Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation
- Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator