Ultrathin HfO_xN_y Gate Insulator Formation by Electron Cyclotron Resonance Ar/N_2 Plasma Nitridation of HfO_2 Thin Films(Si Devices and Processes,<Special Section>Fundamental and Application of Advanced Semiconductor Devices)
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概要
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HfO_xN_y thin films formed by the electron cyclotron resonance (ECR) Ar/N_2 plasma nitridation of HfO_2 films were investigated for high-k gate insulator applications. HfO_xN_y thin films formed by the ECR Ar/N_2 plasma nitridation (60s) of 1.5-nm-thick HfO_2 films, which were deposited on chemically oxidized Si(100) substrates, were found to be effective for suppressing interfacial layer growth or crystallization during postdeposition annealing (PDA) in N_2 ambient. After 900℃ PDA of for 5min in N_2 ambient, it was found that HfSiON film with a relatively high dielectric constant was formed on the HfO_xN_y/Si interface by Si diffusion. An equivalent oxide thickness (EOT) of 2.0nm and a leakage current density of 1.0×10^<-3>A/cm^2 (at V_<FB>-1V) were obtained. The effective mobility of the fabricated p-channel metal-insulator-semiconductor field-effect transistor (MISFET) with the HfO_xN_y gate insulator was 50cm^2/Vs, and the gate leakage current of the MISFET with the HfO_xN_y gate insulator was found to be well suppressed compared with the MISFET with the HfO_2 gate insulator after 900℃ PDA because of the nitridation of HfO_2.
- 2006-05-01
著者
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OHMI Shun-ichiro
Tokyo Institute of Technology
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KUROSE Tomoki
Tokyo Institute of Technology
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SATOH Masaki
Tokyo Institute of Technology
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Ohmi Shun‐ichiro
Tokyo Inst. Technol. Yokohama Jpn
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