OHMI Shun-ichiro | Tokyo Institute of Technology
スポンサーリンク
概要
関連著者
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OHMI Shun-ichiro
Tokyo Institute of Technology
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Ohmi Shun‐ichiro
Tokyo Inst. Technol. Yokohama Jpn
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Ishiwara Hiroshi
Tokyo Institute Of Technology
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Liao Min
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Konkuk Univ.
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Ohmi Shunichiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishikawa Jumpei
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Ohmi Shun-ichiro
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Gao Jun
Dept. Of Electronics And Applied Physics Interdisciplinary Graduate School Of Science And Engineerin
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Sakai Tetsushi
Tokyo Inst. Of Technol. Yokohama‐shi Jpn
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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KUROSE Tomoki
Tokyo Institute of Technology
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SATOH Masaki
Tokyo Institute of Technology
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Gao Jun
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Ishikawa Jumpei
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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Ohmi Shun-ichiro
Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineeri
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MUROTA Junichi
Research Institute of Electrical Communication, Tohoku University
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Morita Shinya
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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YAMAZAKI Takashi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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OHMI Shunichiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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OHRI Hiroyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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SAKURABA Masao
Research Institute for Electrical Communications, Tohoku University
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OMI Hiroo
NTT Basic Research Laboratories, NTT Corporation
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SAKAI Tetsushi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Omi Hiroo
Ntt Basic Research Laboratories
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Ohri Hiroyuki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Sakai Tetsushi
Tokyo Institute Of Technology
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Sakai Tetsushi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Sakuraba Masao
Research Institute For Electrical Communications Tohoku University
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Murota Junichi
Research Institute For Electrical Communications Tohoku University
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Omi Hiroo
Ntt Basic Research Laboratories Ntt Corporation
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SONG Young-Uk
Tokyo Institute of Technology
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Ishikawa Jumpei
Tokyo Institute Of Technology
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Gao Jun
Tokyo Institute Of Technology
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Yamazaki Takashi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Liao Min
Tokyo Institute Of Technology
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ISHIWARA Hiroshi
Department of Physics, Division of Quantum Phases and Devices, Konkuk University
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HAN Dae-Hee
Tokyo Institute of Technology
著作論文
- Ultrathin HfO_xN_y Gate Insulator Formation by Electron Cyclotron Resonance Ar/N_2 Plasma Nitridation of HfO_2 Thin Films(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
- Modulation of PtSi work function by alloying with low work function metal(Session 7A : Gate Oxides)
- Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels(Novel MOSFET Structures,Fundamentals and Applications of Advanced Semiconductor Devices)
- Modulation of PtSi Work Function by Alloying with Low Work Function Metal
- Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
- Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
- Fabrication process of pentacene-based vertical OFETs with HfO gate insulator (シリコン材料・デバイス)
- Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
- Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation
- Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator