Ishiwara Hiroshi | Konkuk Univ.
スポンサーリンク
概要
関連著者
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OHMI Shun-ichiro
Tokyo Institute of Technology
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Ohmi Shun‐ichiro
Tokyo Inst. Technol. Yokohama Jpn
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Ishiwara Hiroshi
Tokyo Institute Of Technology
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Liao Min
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Ishiwara Hiroshi
Konkuk Univ.
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Ohmi Shunichiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Ishiwara Hiroshi
Tokyo Inst. Of Technol. Yokohama Jpn
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Liao Min
Tokyo Institute Of Technology
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
著作論文
- Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
- Fabrication process of pentacene-based vertical OFETs with HfO gate insulator (シリコン材料・デバイス)
- Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors