Ishiwara Hiroshi | Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

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著作論文

Theoretical Considerations on Lateral Spread of Implanted Ions
Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface
Fabrication and Characterization of 1 k-bit 1T2C-Type Ferroelectric Memory Cell Array
Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
Mass Dependence of Critical Amorphizing Dose in Ion Implantation
Studies on Formation Characteristics and Mechanism of SiC on Si and Metal-Silicides by Using Ion Backscattering Techniques
Experimental Simulation on the Beam Heating Effects in Ion Implantation Techniques
Drain Current Characteristics of Ferroelectric Gate-All-Around Si Nanowire Transistors Based on Drift/Diffusion Transport Theory
Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal-Oxide-Semiconductor Diodes with Yb Donor Layer
Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO
Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator

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