OHKI Hiroshi | R&D Association for Future Electron Devices
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概要
関連著者
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OHKI Hiroshi
R&D Association for Future Electron Devices
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Kim Hyun-soo
Department Of Internal Medicine Chonnam National University Medical School
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ISHIKAWA Toru
R&D Association for Future Electron Devices
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FUCHIKAMI Takaaki
R&D Association for Future Electron Devices
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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ISHIWARA Hiroshi
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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Kim H‐s
Tokyo Inst. Technol. Yokohama Jpn
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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FUJISAKI Yoshihisa
R&D Association for Future Electron Devices
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Ishiwara Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Wang Xusheng
R&D Association for Future Electron Device, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Wang Xusheng
R&D Association for Future Electron Device, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Fujisaki Yoshihisa
R&D Association for Future Electron Device, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Fuchikami Takaaki
R&D Association for Future Electron Devices, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Kim Hyun-Soo
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ishikawa Toru
R&D Association for Future Electron Devices, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Ohki Hiroshi
R&D Association for Future Electron Device, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
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Ohki Hiroshi
R&D Association for Future Electron Devices, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
著作論文
- Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array
- Fabrication and Characterization of 1 k-bit 1T2C-Type Ferroelectric Memory Cell Array
- Improvement of Ferroelectric Properties in Mo-Substituted Bi3.35La0.75Ti3O12 Films by Optimization of Heating Rate
- Characterization of Si- and Mo-codoped Bi3.35La0.75Ti3O12 Ferroelectric Thin Films