Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO

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概要

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• Ultrathin poly(4-vinylphenol) (PVP) layer formation by evaporation was investigated for the first time to improve the pentacene/HfO<inf>2</inf>interface characteristics in bottom-gate organic field-effect transistors (OFETs). 3--10-nm-thick PVP layers were successfully deposited by evaporation. It was found that the surface roughness of the PVP layer was remarkably decreased at the deposition temperatures of 50--100 °C both on SiO<inf>2</inf>and HfO<inf>2</inf>gate insulators. The obtained relative dielectric constants of the PVP layers deposited on SiO<inf>2</inf>and HfO<inf>2</inf>were 3.4 and 4.8, respectively. The mobility in the fabricated pentacene-based p-type OFETs with the HfO<inf>2</inf>gate insulator was increased from 0.25 cm²to 0.32 cm²V^-1s^-1at the operation voltage of 2 V by the 5-nm-thick PVP interfacial layer deposited at 50 °C.

• 2013-04-25

著者

• Ohmi Shun-ichiro

  Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo

• Ohmi Shun-ichiro

  Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Ishiwara Hiroshi

  Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

• Kamino Kousuke

  Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan

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