HfOxNy Thin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering
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概要
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HfOxNy thin-film formation on three-dimensional (3D) Si structures by electron cyclotron resonance (ECR) plasma sputtering was investigated. The sputtering conditions, particularly deposition pressure, and the process of HfOxNy formation, were optimized to prepare uniform films with good electrical properties. It was found that an increase in pressure during HfN deposition from 0.15 to 0.19 Pa improved the step coverage of the HfOxNy film in the sidewall region. Two different processes of HfOxNy thin-film formation using ECR plasma sputtering, namely, HfO2 nitridation and HfN oxidation, were investigated to obtain uniform coverage by optimizing the deposition conditions. However, the interfacial layer (IL) growth was enhanced, which increased equivalent oxide thickness (EOT) in the case of HfO2 nitridation. This problem was mitigated by HfN oxidation even for 3D structures. EOTs of 0.94 and 1.7 nm were obtained for the planar HfOxNy/Si and 3D HfOxNy/Si structures, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-05-25
著者
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Ohmi Shun-ichiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Sano Takahiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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