In situ Formation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures

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概要

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• In situ formation of HfN/HfSiON gate stacks on three-dimensional (3D) Si structures using electron cyclotron resonance (ECR) plasma sputtering method was investigated. The conditions of postdeposition annealing (PDA) of in situ formed HfN/HfSiON were optimized to suppress reactions occurring at the interfaces of the gate stack structures for realizing a small equivalent oxide thickness (EOT), low leakage current, and a low density of interface state ($D_{\text{it}}$). It was found that 600 °C/15 s was a suitable condition of PDA of the HfN/HfSiON/p-Si(100) structure to decrease $D_{\text{it}}$ and hysteresis width in the capacitance--voltage ($C$--$V$) characteristic. The EOT and $D_{\text{it}}$ of HfN/HfSiON/p-Si(100) annealed at 600 °C were 0.5 nm and an order of $10^{11}$ cm-2 eV-1, respectively. Furthermore, an excellent $C$--$V$ characteristic of the HfN/HfSiON gate stack annealed at 600 °C was obtained even on 3D Si structures, and the EOT was as small as 0.53 nm.

• 2011-04-25

著者

• Sano Takahiro

  Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Sano Takahiro

  Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

関連論文

• In situ Formation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures
• HfOxNy Thin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering

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