Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator

スポンサーリンク

概要

• 論文の詳細を見る

• Pentacene-based organic field-effect transistors (OFETs) with HfON gate insulators annealed at 140℃ were fabricated, and the effect of peripheral region on the electrical properties of the OFETs was investigated. It was found that the gate leakage current of the OFET without isolation is comparable to the drain current due to the effect of peripheral region. Moreover, the OFET without isolation exhibits current crowding in the I_D-V_D characteristics. Notably, the gate leakage current of the OFET is greatly decreased by patterning of pentacene film. Meanwhile, the OFET with patterned pentacene channel layer shows excellent linear and saturation behaviors in I_D-V_D characteristics.

• 2011-10-13

著者

• OHMI Shun-ichiro

  Tokyo Institute of Technology

• Ohmi Shun‐ichiro

  Tokyo Inst. Technol. Yokohama Jpn

• Ohmi Shunichiro

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Department Of Applied Electronics Tokyo Institute Of Technology

• Ohmi Shun-ichiro

  Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo

• Ishiwara Hiroshi

  Tokyo Institute Of Technology

• Liao Min

  Department Of Electronics And Applied Physics Tokyo Institute Of Technology

• Ishiwara Hiroshi

  Konkuk Univ.

• Ishiwara Hiroshi

  Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

関連論文

• Ultrathin HfO_xN_y Gate Insulator Formation by Electron Cyclotron Resonance Ar/N_2 Plasma Nitridation of HfO_2 Thin Films(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
• Modulation of PtSi work function by alloying with low work function metal(Session 7A : Gate Oxides)
• WS5-03 Involvement of Huntingtin-associated Protein 1 in the Secretion of Insulin from β cell of Pancreatic Islets(Histochemistry of Protein Function)
• Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
• Theoretical Considerations on Lateral Spread of Implanted Ions
• Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
• Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
• Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
• Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
• Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
• Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
• Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
• On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
• Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
• Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
• Ferroelectric Characteristics Control of (Bi,La)_4Ti_3O_ and SrBi_2Ta_2O_9 Films by Addition of Silicates and Germanates
• Structural Characterization and Cytolytic Activity of a Potent Antimicrobial Motif in Longicin, a Defensin-Like Peptide in the Tick Haemaphysalis longicornis
• Dry Etching of Cr_2O_3/Cr Stacked Film during Resist Ashing by Oxygen Plasma
• Multi-bit Programming for 1T-FeRAM by Local Polarization Method
• A New Circuit Simulation Model of Ferroelectric Capacitors
• A New Circuit Simulation Model of Ferroelectric Capacitors
• A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
• Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
• Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
• Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
• Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
• Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
• Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
• Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface
• A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels(Novel MOSFET Structures,Fundamentals and Applications of Advanced Semiconductor Devices)
• Study of Epitaxial Growth of Rotational-Twin-Free CaF_2 Films on Si(111)
• Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
• Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
• Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• The Lattice Location of Phosphorus Atoms Implanted into Silicon
• Modulation of PtSi Work Function by Alloying with Low Work Function Metal
• Fabrication and Characterization of 1 k-bit 1T2C-Type Ferroelectric Memory Cell Array
• Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
• Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
• Mass Dependence of Critical Amorphizing Dose in Ion Implantation
• Studies on Formation Characteristics and Mechanism of SiC on Si and Metal-Silicides by Using Ion Backscattering Techniques
• Experimental Simulation on the Beam Heating Effects in Ion Implantation Techniques
• Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))
• Drain Current Characteristics of Ferroelectric Gate-All-Around Si Nanowire Transistors Based on Drift/Diffusion Transport Theory
• PREFACE
• Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal-Oxide-Semiconductor Diodes with Yb Donor Layer
• Fabrication process of pentacene-based vertical OFETs with HfO gate insulator (シリコン材料・デバイス)
• Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
• Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
• Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO
• HfOxNy Thin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering
• Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation
• Fabrication process of pentacene-based vertical OFETs with HfO_2 gate insulator

もっと見る 閉じる

スポンサーリンク