A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
スポンサーリンク
概要
- 論文の詳細を見る
A behavioral model for ferroelectric capacitors is developed. There are two requirements for the circuit simulation model;one is to reproduce the hysteretic behavior of the polarization under arbitrary voltage history, and the other is to describe the time dependence of polarization change. A parallel element model has been proposed to meet the first requirement. This model reproduces the minor loops of the hysteresis by assuming that the ferroelectric capacitor consists of the parallel capacitors of different polarization and coercive voltages. In order to add the function to describe the time dependence of the polarization change, we propose a method of measuring the switching response for individual parallel elements ant the model which describes the response. In the measurement, the voltage applied to the capacitor is raised in two steps. After the first step, the voltage is kept at an intermediate level for a period of time, then raised again to the final level and the polarization change was recorded as a function of time. Because the capacitor elements with the coercive voltage lower than the intermediate level complete switching during the first step, the polarization change of the whole capacitor during the second step is attributed to the capacitor elements with the coercive voltage higher than the intermediate level. This procedure is repeated with changing the intermediate level, ant the switching response of each capacitor element is obtained by taking the finite differences between the adjacent sets of data. The measurement on a sol-gel derived SrBi_2Ta_2O_9 capacitor revealed that the switching time depended only on the difference between the applied voltage and the coercive voltage of each capacitor element. The time dependence of the polarization change is implemented to the model by inserting a nonlinear resistor in series with each capacitor, which reproduces the polarization switching under arbitrary voltage change without any fitting parameters.
- 社団法人電子情報通信学会の論文
- 2001-06-01
著者
-
Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
-
Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
-
Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
-
Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
-
Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology:frontier Collaborative Researc
-
Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
-
Tamura T
Silicon Technology Lab. Fujitsu Laboratories Ltd.
-
Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
-
ARIMOTO Yoshihiro
System LSI Development Labs., FUJITSU LABORATORIES LTD.
-
TAMURA Tetsuro
R&D Association for Future Electron Devices, Frontier Collaborative Research Center, Tokyo Institute
-
ARIMOTO Yoshihiro
O Ishiwara Lab.
-
ISHIWARA Hiroshi
F-project, FUJITSU LABORATORIES LTD.
-
Arimoto Y
System Lsi Development Labs. Fujitsu Laboratories Ltd.
-
ARIMOTO Yoshihiro
F-project, FUJITSU LABORATORIES LTD.
関連論文
- Formation of Ferroelectric BaMgF_4 Films on GaAs Substrates
- Theoretical Considerations on Lateral Spread of Implanted Ions
- Formation and Characterization of Epitaxial TiO_2 and BaTiO_3/TiO_2 Films on Si Substrate
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- Single Crystalline Silicide Formation
- Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Realization of Adaptive Learning Function for Neuron Oscillation Circuit Using Metal-Ferroelectric-Semiconductor(MFS) FET
- Electrical Properties of La_Sr_CoO_3/Pb(Zr_Ti_)O_3/La_Sr_CoO_3 Thin Film Capacitors Formed on MgO Substrates Using the Sol-Gel Method
- Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors
- Electrical Characteristics of Neuron Pulse Oscillation Circuits Using Complementary Unijunction Transistors and MOSFETs
- Influence of Electrode Contacts on Leakage Current of SrTiO_3 Capacitors
- Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array
- Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array
- Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell(Special Issue on Nonvolatile Memories)
- Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
- Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Preparation of SrBi_2Ta_2O_9 Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using a Double Alcoholate Source
- Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Partial Switching Kinetics of Ferroelectric PbZr_xTi_O_3 Thin Films Prepared by Sol-Gel Technique ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
- Proposal of a Planar 8F^2 1T2C-Type Ferroelectric Memory Cell
- Ferroelectric Characteristics Control of (Bi,La)_4Ti_3O_ and SrBi_2Ta_2O_9 Films by Addition of Silicates and Germanates
- Growth of Crystalline SrTiO_3 Films on Si Substrates Using Thin Fluoride Buffer Layers and Their Electrical Properties
- Data Retention Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Diodes with SrBi_2Ta_2O_9 Ferroelectrics and Al_2O_3 Buffer Layers
- Properties of Ferroelectric BaMgF_4 on Si(100), (110) and (111) Substrates Obtained by Post-Deposition Rapid Thermal Annealing
- Substrate Orientation Dependence of the Properties of Metal-Ferroelectric BaMgF_4-Silicon Capacitors by Post-Deposition Annealing
- Multi-bit Programming for 1T-FeRAM by Local Polarization Method
- Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition
- A New Circuit Simulation Model of Ferroelectric Capacitors
- Preparation of Bi_La_Ti_3O_ Films on Ruthenium Electrodes
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- A Novel Simulation Program with Integrated Circuit Emphasis (SPICE) Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- A Novel SPICE Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
- Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
- Effect of Zr/Ti Ratio on the Reliability Characteristics Behavior of Sol-Gel Derived PZT Films on Pt/IrO_2 Electrode(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon Interface
- Electrical Properties of Ferroelectric BaMgF_4 Films on Si Substrates ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Correlation between Ferroelectricity and Grain Structures of Face-to-Face Annealed Strontium Bismuth Tantalate Thin Films
- A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
- Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates
- High Performanee Parallel Query Processing on a 100 Node ATM Connected PC Cluster (Special Issue on New Generation Database Technologies)
- Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
- Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation
- Electrical Properties of Ferroelectric Gate HEMT Structures
- Contactless Measurement of Electron Mobility in Ferroelectric Gate High-Electron-Mobility Transistor Structures
- Crystalline Quality and Electrical Properties of PbZr_xTi_O_3 Thin Films Prepared on SrTiO_3-Covered Si Substrates
- Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
- Fabrication of PbZr_xTi_O_3 Films on Si Structures Using Y_2O_3 Buffer Layers
- Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Electrical Properties of Gallium Fluoride(GaF_3)/GaAs Interface with and without Sulfur Treatment
- Growth and Crystallinity of Ferroelectric BaMgF_4 Films on (111)-Oriented Pt Films
- Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation
- Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures
- Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write Operation
- Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures
- Ferroelectric Properties of BaMgF_4 Films Grown on Si(100), (111), and Pt(111)/SiO_2/Si(100) Structures
- Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZr_xTi_O_3 (PZT) Films
- Lattice Parameter Control of Epitaxially Grown Hexagonal LaF_3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF_3
- Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
- Preparation of PbTiO_3 Films Utilizing Self-Control Mechanism of Stoichiometric Composition in Dual-Beam Vacuum Evaporation Method
- Enhanced Growth Mechanism in Lateral Solid-Phase Epitaxy of Si Films Simultaneously Doped with P and Ge Atoms
- Epitaxial Growth of SrTiO_3 Films on Si (100) Substrates Using a Focused Electron Beam Evaporation Method
- Stress-Induced Anomalous Growth in Lateral Solid-Phase Epitaxy of Ge-Incorporated Si Films
- The Lattice Location of Phosphorus Atoms Implanted into Silicon
- Preparation and Characterization of PZT Thin Films on CeO_2(111)/Si(111) Structures
- X-Ray and Photolumineseence Characterization of a Strain-Free GaAs-on-Si Structure Formed by Anrnealing under Ultrahigh Pressure
- Formation of Conductive SrVO_3 Films on Si Substrates
- Fabrication and Characterization of 1 k-bit 1T2C-Type Ferroelectric Memory Cell Array
- Effect of Peripheral Region on the Electrical Properties of Pentacene-Based Organic Field-Effect Transistors with HfON Gate Insulator
- Proposal of a Novel Ferroelectric-Gate Field Effect Transistor with Separated Functions for Data read-Out and Data Storage
- Mass Dependence of Critical Amorphizing Dose in Ion Implantation
- Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory Weights
- Studies on Formation Characteristics and Mechanism of SiC on Si and Metal-Silicides by Using Ion Backscattering Techniques
- Experimental Simulation on the Beam Heating Effects in Ion Implantation Techniques
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer
- Effect of an In-situ Process on Electrical Properties of n-Type Pentacene-Based Metal-Oxide-Semiconductor Diodes with Yb Donor Layer
- Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
- Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and Its Applications to Device Fabrication
- Electrical Properties of Ferroelectric Gate HEMT Structures
- Roles of Buffer Layers in Epitaxial Growth of SrTiO_3 Films on Silicon Substrates