Formation of Conductive SrVO_3 Films on Si Substrates
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概要
- 論文の詳細を見る
Formation of conductive SrVO_3 films on Si substrates has been investigated in a coevaporation method of SrO_x and VO_x. It has been found that the conductive films are formed only when hydrogen gas is introduced near the samples during film deposition. The lowest resistivity of the films so far obtained is 1.3 mΩ・cm. It has also been found that the insulating transition layer is formed near the interface with the Si substrate.
- 社団法人応用物理学会の論文
- 1991-12-01
著者
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Ishiwara Hiroshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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JYOKYU Katsuyoshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Jyokyu Katsuyoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology:(present Address)matsushita Elec
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