Ferroelectric Properties of BaMgF4 Films Grown on Si(100), (111), and Pt(111)/SiO2/Si(100) Structures
スポンサーリンク
概要
- 論文の詳細を見る
Ferroelectric properties of BaMgF4 (BMF) films grown on Si(100), (111) and Pt(111)/SiO2/Si(100) structures were studied. No ferroelectric polarization along the surface normal was observed for (011)-oriented BMF films grown on Si(100) substrates, while (120)-oriented BMF films grown on Si(111) and Pt(111)/SiO2/Si(100) structures clearly showed hysteresis characteristics with ferroelectric polarization. The remanent polarization values of the BMF films on Si(111) and Pt(111)/SiO2/Si(100) structures were 0.89 µC/cm2 and 5.0 µC/cm2, respectively. Fabrication and characterization of metal-ferroelectric-semiconductor (MFS) field effect transistors (FETs) using Si(111) substrates were attempted. It was observed that the threshold voltage of the fabricated MFS FETs was shifted upon applying a gate voltage.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Tokumitsu E
Tokyo Inst. Technol. Yokohama Jpn
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Tokumitsu E
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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ICHIKI Tatsuya
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Okamoto Tomoyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology,
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Ichiki Tatsuya
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Okamoto Tomoyuki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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