Reduction of Pyrochlore Phase and Pronounced Improvement of Ferroelectric Properties in Ultrathin SrBi2Ta2O9 Films Derived from Bi-Rich Sol–Gel Solution
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概要
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The crystallinity and ferroelectric properties of sol–gel-derived sub-100-nm-thick SrBi2Ta2O9 (SBT) films with different Bi contents were investigated. The remanent polarization value of a 35-nm-thick SBT film formed using a Sr0.8Bi2.5Ta2O9 precursor solution was 5.2 μC/cm2 at an applied voltage of 1.4 V, which was much larger than that (1.2 μC/cm2) of a 33-nm-thick SBT film formed using a Sr0.8Bi2.2Ta2O9 precursor solution. It was found by X-ray diffraction analysis that this pronounced improvement was caused by the reduction of the pyrochlore phase. It is concluded from these results that a Bi content of around 2.5 is effective in preventing the growth of the pyrochlore phase and improving the ferroelectric properties of sub-50-nm-thick SBT films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-08-15
著者
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Aizawa Koji
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-19 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-9 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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