Cr-Doping Effects to Electrical Properties of BiFeO3 Thin Films Formed by Chemical Solution Deposition
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概要
- 論文の詳細を見る
Cr-doped BiFeO3 (BFO) thin films were formed by depositing sol–gel solutions on Pt/Ti/SiO2/Si(100) structures. Cr-doping up to 6 at % was effective in suppressing leakage current in the high electric field region and in increasing the remanent polarization. In a 3 at % Cr-doped 350-nm-thick BFO film, the remanent polarization as large as 100 μC/cm2 and the coercive field of 260 kV/cm were observed when polarization vs electric field hysteresis loops were drawn at a frequency of 100 kHz with the maximum electric field of 750 kV/cm.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-10-25
著者
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Singh Sushil
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Sato Keisuke
Fujitsu Laboratories Ltd.
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MARUYAMA Kenji
Fujitsu Laboratories Ltd.
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Maruyama Kenji
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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