Positron Annihilation Study on Defects in HfSiON Films Deposited by Electron-Beam Evaporation
スポンサーリンク
概要
- 論文の詳細を見る
Vacancy-type defects in HfSiON high-$k$ films were studied by the $S$-parameter of positron annihilation. In the as-deposited HfSiON films, high-density oxygen vacancies (VOs) induced a large built-in electric field ($E_{\text{built-in}}$) toward Si substrate. It was observed that the thermal positrons diffused from HfSiON films to Si substrate by the driving of the $E_{\text{built-in}}$. Because HfSiON has a small characteristic $S$-parameter and Si substrate has a large characteristic $S$-parameter, the observed $S$-parameter was indirectly increased by the VOs. When most of VOs were compensated by annealing of the samples in nitrogen or oxygen ambient, the $E_{\text{built-in}}$ was much reduced not to effectively drive thermal positrons from HfSiON to Si. Then the $S$-parameter was observed to be smaller.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-11-25
著者
-
Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
Uedono Akira
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
-
Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
-
Yuan Guoliang
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
-
Lu Xubing
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
関連論文
- Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
- Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
- Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Positron Annihilation in Proton Irradiated Czochralski-Grown Si
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
- Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
- Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
- Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array
- Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
- Vacancy-Type Defects in Be-Implanted InP
- Free Volume in Polycarbonate Studied by Positron Annihilation : Effects of Free Radicals and Trapped Electrons on Positronium Formation : Structure and Mechanical and Thermal Properties of Condensed Matter
- Evaluation of SOI Substrates by Positron Annihilation
- 30-day-long Data Retention in Ferroelectric-gate FETs with HfO_2 Buffer Layers
- Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
- Structure-modification model of porogen-based porous SiOC film with ultraviolet curing (Special issue: Advanced metallization for ULSI applications)
- Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
- Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
- Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
- Cr-Doping Effects to Electrical Properties of BiFeO_3 Thin Films Formed by Chemical Solution Deposition
- Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
- Novel Optical Method for Widening Process Window of Phase-Modulated Excimer Laser Crystallization
- Fabrication and Electrical Characteristics of Metal–Ferroelectric–Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)
- High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO3/BiFe0.95Mn0.05O3/SrRuO3/Pt Ferroelectric Capacitors Formed on SiO2-Coated Si Substrates
- Organic Ferroelectric Diodes with Long Retention Characteristics Suitable for Non-Volatile Memory Applications
- Reduced Leakage Current in BiFeO_3 Thin Films on Si Substrates Formed by a Chemical Solution Method
- Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
- Improvement in Ferroelectric Fatigue Endurance of Poly(methyl metacrylate)-Blended Poly(vinylidene fluoride–trifluoroethylene)
- Comparative Study on Metal–Ferroelectric–Insulator–Semiconductor Diodes Composed of Poly(vinyliden fluoride-trifluoroethylene) and Poly(methyl metacrylate)-Blended Poly(vinyliden fluoride-trifluoroethylene)
- High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO_3/BiFe_Mn_O_3/SrRuO_3/Pt Ferroelectric Capacitors Formed on SiO_2-Coated Si Substrates
- Ferroelectric Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films
- Comparative Studies on Ferroelectric Properties of Mn-Substituted BiFeO3 Thin Films Deposited on Ir and Pt Electrodes
- Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride--trifluoroethylene)
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
- Study of Interactions of Hf and SiO2 Film for High-$k$ Materials
- Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices
- Large Remanent Polarization in Sm-Substituted BiFeO3 Thin Film Formed by Chemical Solution Deposition
- Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition
- Ferroelectric Properties of Cr-Doped BiFeO3 Films Crystallized below 500 °C
- Thickness Dependences of Polarization Characteristics in Mn-Substituted BiFeO3 Films on Pt Electrodes
- Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams
- Positron Annihilation Study on Defects in HfSiON Films Deposited by Electron-Beam Evaporation
- Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers
- Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
- Characterization of Low-$k$/Cu Damascene Structures Using Monoenergetic Positron Beams
- Optimum Ferroelectric Film Thickness in Metal–Ferroelectric–Insulator–Semiconductor Structures Composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Study on Stability of Pentacene-Based Metal–Oxide–Semiconductor Diodes in Air Using Capacitance–Voltage Characteristics
- Dependence of Ferroelectric Properties on Thickness of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition
- Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams
- Doping Effect of Rare-Earth Ions on Electrical Properties of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition
- Characteristics of Undoped and Mn-Doped BiFeO3 Films Formed on Pt and SrRuO3/Pt Electrodes by Radio-Frequency Sputtering
- Reduction of Pyrochlore Phase and Pronounced Improvement of Ferroelectric Properties in Ultrathin SrBi2Ta2O9 Films Derived from Bi-Rich Sol–Gel Solution
- Ferroelectric Properties of Pt/Pb5Ge3O11/Pt and Pt/Pb5Ge3O11/HfO2/Si Structures
- Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
- Cr-Doping Effects to Electrical Properties of BiFeO3 Thin Films Formed by Chemical Solution Deposition
- Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
- Evaluation of SOI Substrates by Positron Annihilation
- Comparison of Ferroelectric and Insulating Properties of Mn-Doped BiFeO3 Films Formed on Pt, SrRuO3/Pt, and LaNiO3/Pt Bottom Electrodes by Radio-Frequency Sputtering
- A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam