Comparative Study on Metal–Ferroelectric–Insulator–Semiconductor Diodes Composed of Poly(vinyliden fluoride-trifluoroethylene) and Poly(methyl metacrylate)-Blended Poly(vinyliden fluoride-trifluoroethylene)
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概要
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Ferroelectric poly(vinyliden fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl metacrylate) (PMMA)-blended P(VDF-TrFE) thin films were deposited by spin coating on Pt/TiO2/SiO2/Si and SiO2/Si structures, and their characteristics were investigated by forming metal–ferroelectric–metal (MFM) capacitors and metal–ferroelectric–insulator–semiconductor (MFIS) diodes. It was found that the data retention characteristics of MFIS diodes were significantly improved by blending PMMA and P(VDF-TrFE) and by optimizing the insulating buffer layer thickness. Under the present conditions, the longest data retention time of 6 h was obtained using a 1.5-nm-thick SiO2 buffer layer on Si.
- 2009-09-25
著者
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Park Byung-eun
Department Of Electrical And Computer Engineering University Of Seoul
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Park Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul 130-743, Korea
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Yoon Joo-Won
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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