Dependence of Ferroelectric Properties on Thickness of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition
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概要
- 論文の詳細を見る
Bismuth ferrite (BiFeO3) thin films were fabricated by depositing sol–gel solutions on Pt/Ti/SiO2/Si(100) structures. X-ray diffraction (XRD) showed that a polycrystalline phase and also a small fraction of a secondary phase, Bi2Fe4O9, were present in the film. The nonperovskite secondary phase decreased with increasing thickness, which showed the influence of volume effects on the film. Improved leakage current density and enhanced polarization in BiFeO3 films were observed. A 400-nm-thick film showed a leakage current on the order of $10^{-8}$ A/cm2 at room temperature. The remanent polarization was approximately 90 μC/cm2 at 80 K and the piezoelectric coefficient $d_{33}$ was approximately 50 pm/V.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-12-15
著者
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UENO Risako
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Funakubo Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Koda Seiichiro
Department Of Chemical Engineering Facutly Of Engineering The University Of Tokyo
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Uchida Hiroshi
Department Of Anesthesia Tottori Prefectural Central Hospital
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Uchida Hiroshi
Department of Chemistry, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
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Shngh Sushil
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
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Koda Seiichiro
Department of Chemistry, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
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Ueno Risako
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
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