Ishiwara Hiroshi | Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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概要
- Ishiwara Hiroshiの詳細を見る
- 同名の論文著者
- Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technologyの論文著者
関連著者
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Funakubo Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Singh Sushil
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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ISHIWARA Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Zhong Zhiyong
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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MARUYAMA Kenji
Fujitsu Laboratories Ltd.
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Park Byung-eun
Department Of Electrical And Computer Engineering University Of Seoul
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Fujisaki Yoshihisa
Central Research Laboratory Hitachi Limited
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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Kim Jeong
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Takahashi Kazuhiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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SINGH Sushil
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Sato Keisuke
Fujitsu Laboratories Ltd.
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Aizawa Koji
Department Of Information And Communication Engineering Kanazawa Institute Of Technology
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Aizawa Koji
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-19 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Yoon Joo-Won
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Kim Jeong
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kuroiwa Takeharu
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Cross Jeffrey
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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FUJISAKI Yoshihisa
Central Research Laboratory, Hitachi Ltd.
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PARK Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul
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Park Byung
Department Of Biochemistry Medical School Chonbuk National University
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FURUKAWA Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Kim H‐s
Tokyo Inst. Technol. Yokohama Jpn
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UENO Risako
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Kim Jeong
Department Of Anatomy Wonkwang University School Of Medicine
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Taniguchi Yukio
Advanced Lcd Technologies Development Center Co. Ltd. (altedec)
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Ohmi Shun-ichiro
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Shinozaki Kazuo
Department Of Biology Faculty Of Science Osaka University
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Nishida Jun-ichi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Yamashita Yoshiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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ISHIKAWA Toru
R&D Association for Future Electron Devices
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KIM Hyun-Soo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Azuma Kazufumi
Advanced Lcd Technologies Development Center Co. Ltd.
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TAKAHASHI Kazuhiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Fujisaki Sumiko
Hitachi Ltd. Tokyo Jpn
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Fujisaki Sumiko
Hitachi Ltd.
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Koda Seiichiro
Department Of Chemical Engineering Facutly Of Engineering The University Of Tokyo
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Matsumura Masakiyo
Advanced Lcd Technologies Development Center Co. Ltd.(altedec)
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Aizawa Koji
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Singh Sushil
Tokyo Inst. Of Technol. Yokohama Jpn
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Fujisaki Sumiko
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokoham
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Fujisaki Yoshihisa
Central Research Laboratory Hitachi Ltd.
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Uchida Hiroshi
Department Of Anesthesia Tottori Prefectural Central Hospital
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Kim Hyun-soo
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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KIM Jeong
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Lee Gwang-geun
Precision And Intelligence Lab Tokyo Institute Of Technology
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Ishikawa Toru
R&d Association For Future Electron Devices
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Sato Takehiko
Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Maruyama Kenji
Fujitsu Laboratories, Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Singh Sushi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Uedono Akira
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Zhiyong Zhong
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Sung-Min Yoon
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Yuan Guoliang
Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Lu Xubing
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Kuroiwa Takeharu
Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Ohmi Shun-Ichiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori, Yokohama 226-8502, Japan
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Singh Sushil
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
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Aizawa Koji
Department of Information and Communication Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
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Aizawa Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-19 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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Endo Takahiko
Advanced LCD Technologies Development Center Co., Ltd., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Cross Jeffrey
Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8550, Japan
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Bozgeyik Mehmet
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8550, Japan
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Park Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul 130-743, Korea
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Uchida Hiroshi
Department of Chemistry, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
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Yamashita Yoshiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori, Yokohama 226-8502, Japan
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Akhtaruzzaman Md.
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori, Yokohama 226-8502, Japan
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Shngh Sushil
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
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Fujisaki Yoshihisa
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Kim Jeong
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Koda Seiichiro
Department of Chemistry, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
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Shinozaki Kazuo
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8550, Japan
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Joo-Won Yoon
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Yoon Sung-Min
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Endo Takahiko
Advanced LCD Technologies Development Center Co., Ltd. (ALTEDEC), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan
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Funakubo Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Funakubo Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Furukawa Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Park Byung
Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul 130-743, Korea
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Park Byung-Eun
Department of Electrical and Computer Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemoon-gu, Seoul 130-743, Korea
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori, Yokohama 226-8502, Japan
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-9 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Sugiyama Yoshihiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sugiyama Yoshihiro
Fujitsu Laboratories, Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Yoshihiro Sugiyama
Fujitsu Laboratories, Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Ohara Shuichiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-9 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Maruyama Kenji
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Ueno Risako
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
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Takahashi Kazuhiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226-8503, Japan
著作論文
- Fabrication and Characterization of 1k-bit 1T2C-Type Ferroelectric Memory Cell Array
- 30-day-long Data Retention in Ferroelectric-gate FETs with HfO_2 Buffer Layers
- Cr-Doping Effects to Electrical Properties of BiFeO_3 Thin Films Formed by Chemical Solution Deposition
- Novel Optical Method for Widening Process Window of Phase-Modulated Excimer Laser Crystallization
- Fabrication and Electrical Characteristics of Metal–Ferroelectric–Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)
- High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO3/BiFe0.95Mn0.05O3/SrRuO3/Pt Ferroelectric Capacitors Formed on SiO2-Coated Si Substrates
- Organic Ferroelectric Diodes with Long Retention Characteristics Suitable for Non-Volatile Memory Applications
- Reduced Leakage Current in BiFeO_3 Thin Films on Si Substrates Formed by a Chemical Solution Method
- Improvement in Ferroelectric Fatigue Endurance of Poly(methyl metacrylate)-Blended Poly(vinylidene fluoride–trifluoroethylene)
- Comparative Study on Metal–Ferroelectric–Insulator–Semiconductor Diodes Composed of Poly(vinyliden fluoride-trifluoroethylene) and Poly(methyl metacrylate)-Blended Poly(vinyliden fluoride-trifluoroethylene)
- High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO_3/BiFe_Mn_O_3/SrRuO_3/Pt Ferroelectric Capacitors Formed on SiO_2-Coated Si Substrates
- Ferroelectric Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films
- Comparative Studies on Ferroelectric Properties of Mn-Substituted BiFeO3 Thin Films Deposited on Ir and Pt Electrodes
- Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride--trifluoroethylene)
- Large Remanent Polarization in Sm-Substituted BiFeO3 Thin Film Formed by Chemical Solution Deposition
- Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition
- Ferroelectric Properties of Cr-Doped BiFeO3 Films Crystallized below 500 °C
- Thickness Dependences of Polarization Characteristics in Mn-Substituted BiFeO3 Films on Pt Electrodes
- Positron Annihilation Study on Defects in HfSiON Films Deposited by Electron-Beam Evaporation
- Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers
- Optimum Ferroelectric Film Thickness in Metal–Ferroelectric–Insulator–Semiconductor Structures Composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si
- Study on Stability of Pentacene-Based Metal–Oxide–Semiconductor Diodes in Air Using Capacitance–Voltage Characteristics
- Dependence of Ferroelectric Properties on Thickness of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition
- Doping Effect of Rare-Earth Ions on Electrical Properties of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition
- Characteristics of Undoped and Mn-Doped BiFeO3 Films Formed on Pt and SrRuO3/Pt Electrodes by Radio-Frequency Sputtering
- Reduction of Pyrochlore Phase and Pronounced Improvement of Ferroelectric Properties in Ultrathin SrBi2Ta2O9 Films Derived from Bi-Rich Sol–Gel Solution
- Ferroelectric Properties of Pt/Pb5Ge3O11/Pt and Pt/Pb5Ge3O11/HfO2/Si Structures
- Cr-Doping Effects to Electrical Properties of BiFeO3 Thin Films Formed by Chemical Solution Deposition
- Comparison of Ferroelectric and Insulating Properties of Mn-Doped BiFeO3 Films Formed on Pt, SrRuO3/Pt, and LaNiO3/Pt Bottom Electrodes by Radio-Frequency Sputtering