Ferroelectric Properties of Pt/Pb5Ge3O11/Pt and Pt/Pb5Ge3O11/HfO2/Si Structures
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概要
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The ferroelectric properties of metal–ferroelectric–metal (MFM) capacitors with a Pt/Pb5Ge3O11(PGO)/Pt structure and metal–ferroelectric–insulator–semiconductor (MFIS) diodes with a Pt/PGO/HfO2/Si structure were investigated. $C$-axis-oriented PGO thin films were formed on both Pt/SiO2/Si and HfO2 (6 nm)/Si structures by a sol–gel method. Typical values of remanent polarization ($2P_{\text{r}}$), coercive field ($2E_{\text{c}}$), and dielectric constant in the MFM capacitors were 5.7 μC/cm2, 63 kV/cm, and 50, respectively, and the remanent polarization gradually increased with the switching pulses for up to $1 \times 10^{10}$ cycles. It was also found that the memory window in the MFIS diodes with a 340-nm-thick PGO film was as large as 1.3 V.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-09-15
著者
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Aizawa Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-19 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Ohara Shuichiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-9 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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