Ferroelectric Properties of BaMgF_4 Films Grown on Si(100), (111), and Pt(111)/SiO_2/Si(100) Structures
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Ishiwara Hiroshi
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ishiwara Hiroshi
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara H
Tokyo Institute Of Technology Interdisciplinary Graduate School Of Science And Engineering
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AIZAWA Koji
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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ICHIKI Tatsuya
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ichiki Tatsuya
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Aizawa Koji
Department of Physiology, Tokyo Medical University
関連論文
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- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
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- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
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