Preparation and Characterization of PZT Thin Films on CeO_2(111)/Si(111) Structures
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概要
- 論文の詳細を見る
We report the crystalline quality and electrical properties of PbZr<1-x>Ti_xO_3 (PZT) films on Si substrates with epitaxially grown CeO_2 buffer layers were deposited by the electron-beam-assisted evaporation technique, and PZT films were formed by the sol-gel technique. It is shown that CeO_2 buffer layers, which were epitaxially grown on Si(111) substrates at 500℃, effectively suppressed Si and Pb interdiffusion between PZT films and Si substrates. Furthermore, the capacitance-voltage and current-voltage properties of PZT/CeO_2/Si indicated a ferroelectric nature and excellent breakdown strength.
- 社団法人応用物理学会の論文
- 1996-09-30
著者
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Sakai I
Precision And Intelligence Laboratory Tokyo Institute Of Technology:(present Address) Hewlett-packar
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SAKAI Ikuo
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TOKUMITU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Tokumitu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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