Crystalline Quality and Electrical Properties of PbZr_xTi_<1-x>O_3 Thin Films Prepared on SrTiO_3-Covered Si Substrates

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We report the crystalline quality and electrical properties of PbZ_xTi_<14-x>O_3 (PZT) films grown on Si substrates with a SrTiO_3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron beam assisted vacuum evaporation technique and the sol-gel technique, respectively. It is shown that by using a thin (8 nm) metal Sr layer or fluoride (SrF_2, CaF_2) predeposition layers prior to the STO deposition, which reduces the SiO_2 layer at the Si surface, highly oriented STO and PZT thin films can be grown on Si(100) and (111) substrates. Crystalline orientation of the PZT films strongly depends on the crystalline orientation of the STO buffer layers. It is also shown that the full width at half-maximum (FWHM) values of X-ray diffraction (XRD) peaks from PZT films are strongly related to those of STO buffer layers. Furthermore, the capacitance-voltage characteristics and current response measurements indicate the ferroelectric nature of PZT films grown on STO-covered Si substrates.
社団法人応用物理学会の論文
1995-09-30