Partial Switching Kinetics of Ferroelectric PbZr_xTi_<1-x>O_3 Thin Films Prepared by Sol-Gel Technique (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-09-30
著者
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ISHIWARA Hiroshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TOKUMITSU Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ishiwara Hiroshi
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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TANISAKE Noriaki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Tanisake Noriaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
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