Characterization of Sol-gel Derived Bi4-xLaxTi3O12 Films
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概要
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Ferroelectric Bi4Ti3O12 (BIT) and Bi4-xLaxTi3O12(BLT) ($x=0.25, 0.5, 0.75$) films were prepared on Pt/Ti/SiO2 substrates by the sol-gel technique. The $P$–$E$ hysteresis loop, whose squareness was enhanced more than that of a BIT film's, was obtained for a BLT film with a La composition of 0.75 annealed at 650°C or higher temperatures. A remanent polarization of 13 $\mu$C/cm2 and a coercive electric field of 80 kV/cm were obtained. Raman scattering measurements reveal that the crystallization temperature at which a perovskite structure forms decreased with increasing La content. In addition, it is shown that the crystallization process depends on the La content.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2002-11-30
著者
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Osada Minoru
Presto Japan Science And Technology Corporation (jst)
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Sugita Naoki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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Osada Minoru
PRESTO, JST, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Tokumitsu Eisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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