Data Retention and Readout Degradation Properties of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si Structure Ferroelectric-Gate Field Effect Transistors
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概要
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We discuss the data retention and readout degradation properties of ferroelectric-gate field-effect transistors (FeFETs) with Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si structures. We first point out that to read out the stored data correctly, unselected FeFETs should be turned off during the readout process and that this process causes a significant reduction of ON readout current. We next characterize the data retention properties of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si structure n-channel FeFET by taking the readout process into account. It is shown that the retention property measured by applying positive readout pulses after holding at $V_{\text{G}}=0$ V for 30 s, is similar to that measured by the conventional method in which drain current is continuously measured at a positive hold voltage.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-01-15
著者
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Saiki Hirokazu
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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Saiki Hirokazu
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-19, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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