Characterization of Metal-Ferroelectric-(Metal-)Insulator-Semiconductor(MF(M)IS)Structures Using(Pb, La)(Zr, Ti)O_3 and Y_2O_3 Films
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概要
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Metal-Ferroelectric-(metal-)insulator-semiconductor(MF(M)IS)structures are fabricated and characterized using(Pb, La)(Zr_<0.3>Ti_<0.7>)O_3(PLZT)and Y_2O_3 films. Y_2O_3 buffer layers are epitaxially grown on Si(111)substrates by molecular beam epitaxy and ferroelectric PLZT films are formed on(Pt/)Y_2O_3/Si by the sol-gel technique. It was found that the Al/Y_2O_3/Si MIS structure has a low leakage current of less than 10^<-8> A/cm^2. The capacitance-voltage(C-V)characteristics of the PLZT/Y_2O_3/Si MFIS structure exhibit a hysteresis loop due to the ferroelectricity of the PLZT film with a memory window of 1 V. On the other hand, the memory window of the Pt/PLZT/Pt/Y_2O_3/Si MFMIS structures is significantly improved.
- 社団法人応用物理学会の論文
- 2000-09-30
著者
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Tokumitsu Eisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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TAKAHASHI Daisuke
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Takahashi Daisuke
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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