Improved Data Disturbance Effects in 1T2C-Type Ferroelectric Memory Array
スポンサーリンク
概要
- 論文の詳細を見る
The data disturbance characteristics in writing operations were investigated in a 1T2C-type ferroelectric memory array. On the basis of the analysis, a modified V/3-rule data writing method for reducing the data disturbance effect was proposed and verified experimentally. It was found that the current on/off ratio was maintained sufficiently to distinguish stored binary data, even after the application of $10^{4}$ disturbance pulses, which were generated during writing operation for other cells. It was also found that the proposed data writing method is effective in reducing the data disturbance effect.
- 2004-05-15
著者
-
Kim Hyun-soo
Frontier Collaborative Research Center Tokyo Insitute Of Technology
-
Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
関連論文
- Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi_2Ta_2O_9/Pt/Ti/SiO_2/Si Structure-Field Effect Transistor as a Synapse Device
- Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric SrBi_2Ta_2O_9)-Gate FETs and CMOS Schmitt-Trigger Oscillators
- Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi_2Ta_2O_9)/Semiconductor Field Effect Transistor (MFSFET)
- Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell(Special Issue on Nonvolatile Memories)
- Preparation of SrBi_2Ta_2O_9 Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using a Double Alcoholate Source
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- Proposal of a Planar 8F^2 1T2C-Type Ferroelectric Memory Cell
- Data Retention Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Diodes with SrBi_2Ta_2O_9 Ferroelectrics and Al_2O_3 Buffer Layers
- Preaparation of Ferroelectric Thin Films Using Sol-Gel Solutions Dissolved in Supercritical Carbon Dioxide
- A New Circuit Simulation Model of Ferroelectric Capacitors
- Preparation of Bi_La_Ti_3O_ Films on Ruthenium Electrodes
- A New Circuit Simulation Model of Ferroelectric Capacitors
- A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- A Novel SPICE Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Correlation between Ferroelectricity and Grain Structures of Face-to-Face Annealed Strontium Bismuth Tantalate Thin Films
- Significant Enhancement of Bi_La_Ti_3O_ Ferroelectricity Derived by Sol-Gel Method
- Si-Substituted Ultrathin Ferroelectric Films : Electrical Properties of Condensed Matter
- Write and Read-Out Operations of Novel 1T2C-Type Ferroelectric Memory Cells with an Array Structure : Electrical Properties of Condensed Matter
- Low-Temperature Synthesis of SrBi_2Ta_2O_9 Thin Films with Bi_2SiO_5-Containing Seed Layers : Surfaces, Interfaces, and Fiims
- Sol-Gel Derived Ferroelectric Pb(Zr_Ti_x)O_3-SiO_2-B_2O_3 Glass-Ceramic Thin Films Formed at Relatively Low Annealing Temperatures
- A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- Improvement of Electrical Property of Sol-Gel-Derived Lead Zirconate Titanate Thin Films by Multiple Rapid Thermal Annealing : Surfaces, Interfaces, and Films
- Structural and Electrical Properties of Ferroelectric Pb(Zr1-xTix)O3–SiO2 Glass–Ceramic Thin Films Derived by the Sol–Gel Method
- Characteristics of LaAlO_3 as Insulating Buffer Layers of Ferroelectric-Gate Field Effect Transistors
- Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell with Local Interconnections
- Characterization of Metal-Ferroelectric-(Metal-)Insulator-Semiconductor(MF(M)IS)Structures Using(Pb, La)(Zr, Ti)O_3 and Y_2O_3 Films
- Improvement of Ferroelectric Properties in RF-Magnetron-Sputtered SrBi2Ta2O9 Thin Films by Addition of Si Atoms
- Praseodymium-Substituted Strontium Bismuth Tantalate Films with Saturated Remanent Polarization at 1 V
- Improved Data Disturbance Effects in 1T2C-Type Ferroelectric Memory Array
- Characteristics of Paired Bi(4-x)LaxTi3O12 (BLT) Capacitors Suitable for 1T2C-Type FeRAM
- Damage-Free and Hydrogen-Free Nitridation of Silicon Substrate by Nitrogen Radical Source
- Improvement of Ferroelectric Properties in Mo-Substituted Bi3.35La0.75Ti3O12 Films by Optimization of Heating Rate
- Characterization of Si- and Mo-codoped Bi3.35La0.75Ti3O12 Ferroelectric Thin Films
- A Novel Simulation Program with Integrated Circuit Emphasis (SPICE) Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
- Preparation of Ferroelectric Thin Films Using Sol-Gel Solutions Dissolved in Supercritical Carbon Dioxide
- Significant Enhancement of Bi3.45La0.75Ti3O12 Ferroelectricity Derived by Sol-Gel Method