Structural and Electrical Properties of Ferroelectric Pb(Zr1-xTix)O3–SiO2 Glass–Ceramic Thin Films Derived by the Sol–Gel Method

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Ferroelectric PbZr1-xTixO3–SiO2 ($\text{SiO}_{2}=0\text{--}30$ mol%) glass–ceramic thin films were fabricated by sol–gel and rapid thermal annealing (RTA) techniques on Pt/Ti/SiO2/Si(100) substrates. The perovskite-phase PbZr1-xTixO3 crystallites were grown in the films, preferentially along the (111) direction for lower SiO2 concentration ($\leq 20$ mol%) and along the (100) direction for higher SiO2 concentration ($\geq 30$ mol%). It was found that the Zr/Ti ratio in the films decreased with increasing SiO2 content. It was also found in the samples with SiO2 concentration up to 20 mol% that the hysteresis shape in the polarization vs voltage ($P$–$V$) characteristics was not seriously degraded, while such quantities as remnant polarization, dielectric constant, and loss became lower than those of a pure PZT thin film. Furthermore, the $\text{PZT}+5\,\text{mol}\%\text{SiO}_{2}$ thin film was found to show a saturated hysteresis loop and good retention property. These results indicate that the ferroelectric glass–ceramic thin film is one of the promising candidate gate material for FET-type ferroelectric memory applications.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-03-15