Characteristics of LaAlO_3 as Insulating Buffer Layers of Ferroelectric-Gate Field Effect Transistors
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概要
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LaAlO_3 films were prepared on Si (100) substrates by an electron cyclotron resonance (ECR)-sputtering method, with the aim of using these films as an insulator layer in the metal-ferroelectric-[metal-]insularor-semiconductor (MF[M]IS) structure. In the characterization of the films, particular attention was paid to the comparison with Al_2O_3 with the same equivalent oxide thickness (EOT). It was found that electrical properties such as maximum induced charge density, long-term reliability, time-dependent dielectric breakdown, and so on were superior in LaAlO_3 than in Al_2O_3 with the same EOT. It was also found that LaAIO_3 had better oxidation resistance characteristics by a factor of six than SiO_2 at 800℃. Next, MFMIS diodes composed of SrBi_2Ta_2O_9 and LaAlO_3 were fabricated and good memory characteristics were obtained when the ratio of the MFM capacitor to the MIS capacitor was 12.
- 社団法人応用物理学会の論文
- 2002-11-30
著者
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Kang Seung-kuk
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Ishiwara Hiroshi
Frontier Collaborative Research Center Tokyo Insitute Of Technology
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